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Fahey, P. M., Griffin, P. B., Plummer, J. D. (1989) Point defects and dopant diffusion in silicon. Reviews of Modern Physics, 61 (2). 289-384 doi:10.1103/revmodphys.61.289

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Reference TypeJournal (article/letter/editorial)
TitlePoint defects and dopant diffusion in silicon
JournalReviews of Modern Physics
AuthorsFahey, P. M.Author
Griffin, P. B.Author
Plummer, J. D.Author
Year1989 (April 1)Volume61
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/revmodphys.61.289Search in ResearchGate
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Mindat Ref. ID10695092Long-form Identifiermindat:1:5:10695092:0
GUID0
Full ReferenceFahey, P. M., Griffin, P. B., Plummer, J. D. (1989) Point defects and dopant diffusion in silicon. Reviews of Modern Physics, 61 (2). 289-384 doi:10.1103/revmodphys.61.289
Plain TextFahey, P. M., Griffin, P. B., Plummer, J. D. (1989) Point defects and dopant diffusion in silicon. Reviews of Modern Physics, 61 (2). 289-384 doi:10.1103/revmodphys.61.289
In(1989, April) Reviews of Modern Physics Vol. 61 (2) American Physical Society (APS)

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Ural, Ant, Griffin, P. B., Plummer, J. D. (1999) Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects. Physical Review Letters, 83 (17). 3454-3457 doi:10.1103/physrevlett.83.3454
Griffin, P. B., Fahey, P. M., Plummer, J. D., Dutton, R. W. (1985) Measurement of silicon interstitial diffusivity. Applied Physics Letters, 47 (3). 319-321 doi:10.1063/1.96205
Ahn, S. T., Griffin, P. B., Shott, J. D., Plummer, J. D., Tiller, W. A. (1987) A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion. Journal of Applied Physics, 62 (12). 4745-4755 doi:10.1063/1.339028
Rousseau, P. M., Griffin, P. B., Plummer, J. D. (1994) Electrical deactivation of arsenic as a source of point defects. Applied Physics Letters, 65 (5). 578-580 doi:10.1063/1.112301
Crowder, S. W., Griffin, P. B., Hsieh, C. J., Wei, G. Y., Plummer, J. D., Allen, L. P. (1994) Oxidation enhanced dopant diffusion in separation by implantation by oxygen siliconā€onā€insulator material. Applied Physics Letters, 64 (24). 3264-3266 doi:10.1063/1.111304
Perozziello, E. A., Griffin, P. B., Plummer, J. D. (1992) Retarded diffusion of Sb in a high concentration As background during silicon oxidation. Applied Physics Letters, 61 (3). 303-305 doi:10.1063/1.107919
Chao, H. S., Griffin, P. B., Plummer, J. D. (1996) Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon. Applied Physics Letters, 68 (25). 3570-3572 doi:10.1063/1.116640
Crowder, S. W., Hsieh, C. J., Griffin, P. B., Plummer, J. D. (1994) Effect of buried Siā€SiO2interfaces on oxidation and implantā€enhanced dopant diffusion in thin siliconā€onā€insulator films. Journal of Applied Physics, 76 (5). 2756-2764 doi:10.1063/1.357539
Wittmer, M., Fahey, P., Cotte, J., Iyer, S. S., Scilla, G. J. (1992) Silicide formation and dopant diffusion in silicon. Physical Review B, 45 (19) 11383-11386 doi:10.1103/physrevb.45.11383
Ural, Ant, Griffin, P. B., Plummer, J. D. (2001) Silicon self-diffusion under extrinsic conditions. Applied Physics Letters, 79 (26). 4328-4330 doi:10.1063/1.1425953
Kleman, M., Friedel, J. (2008) Disclinations, dislocations, and continuous defects: A reappraisal. Reviews of Modern Physics, 80 (1). 61-115 doi:10.1103/revmodphys.80.61
 
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