Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Prins, Johan F. (1988) Activation of boron-dopant atoms in ion-implanted diamonds. Physical Review B, 38 (8) 5576-5584 doi:10.1103/physrevb.38.5576

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleActivation of boron-dopant atoms in ion-implanted diamonds
JournalPhysical Review B
AuthorsPrins, Johan F.Author
Year1988 (September 15)Volume38
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.5576Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101048Long-form Identifiermindat:1:5:14101048:1
GUID0
Full ReferencePrins, Johan F. (1988) Activation of boron-dopant atoms in ion-implanted diamonds. Physical Review B, 38 (8) 5576-5584 doi:10.1103/physrevb.38.5576
Plain TextPrins, Johan F. (1988) Activation of boron-dopant atoms in ion-implanted diamonds. Physical Review B, 38 (8) 5576-5584 doi:10.1103/physrevb.38.5576
In(1988, September) Physical Review B Vol. 38 (8) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Prins, Johan F. (1988) Improved activation of boron-dopant atoms implanted into diamond. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 35 (3). 484-487 doi:10.1016/0168-583x(88)90316-3
Prins, Johan F. (1991) Point-defect interactions when annealing diamonds implanted at low temperatures. Physical Review B, 44 (6) 2470-2479 doi:10.1103/physrevb.44.2470
Prins, Johan F. (1985) Onset of hopping conduction in carbon-ion-implanted diamond. Physical Review B, 31 (4) 2472-2478 doi:10.1103/physrevb.31.2472
Prins, Johan F. (2000) Erratum: Point-defect interactions when annealing diamonds implanted at low temperatures [Phys. Rev. B44, 2470 (1991)]. Physical Review B, 62 (1) 726 doi:10.1103/physrevb.62.726
Zeidler, J. R., Hewett, C. A., Wilson, R. G. (1993) Carrier activation and mobility of boron-dopant atoms in ion-implanted diamond as a function of implantation conditions. Physical Review B, 47 (4) 2065-2071 doi:10.1103/physrevb.47.2065
Tshepe, T., Kasl, C., Prins, J. F., Hoch, M. J. R. (2004) Metal-insulator transition in boron-ion-implanted diamond. Physical Review B, 70 (24) doi:10.1103/physrevb.70.245107
Prins, Johan F. (1991) Annealing effects when activating dopant atoms in ion-implanted diamond layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1387-1390 doi:10.1016/0168-583x(91)95837-4
Prins, Johan F, Derry, Trevor E (2000) Radiation defects and their annealing behaviour in ion-implanted diamonds. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 166. 364-373 doi:10.1016/s0168-583x(99)01190-8
Prins, Johan F. (1993) Ion beam modification and dopant activation in diamond. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 1433-1440 doi:10.1016/0168-583x(93)90815-n
Prins, Johan F. (1989) Fermi-Dirac statistics and the nature of the compensating donors in boron-doped diamond layers. Physical Review B, 39 (6) 3764-3770 doi:10.1103/physrevb.39.3764
Prins, Johan F. (2000) n-type semiconducting diamond by means of oxygen-ion implantation. Physical Review B, 61 (11) 7191-7194 doi:10.1103/physrevb.61.7191
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 7, 2026 03:05:45
Go to top of page