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Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3. Physical Review B, 38 (8) 5677-5683 doi:10.1103/physrevb.38.5677

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Reference TypeJournal (article/letter/editorial)
TitleImperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3
JournalPhysical Review B
AuthorsWatanabe, YuichiAuthor
Kawazoe, HiroshiAuthor
Yamane, MasayukiAuthor
Year1988 (September 15)Volume38
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.5677Search in ResearchGate
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Mindat Ref. ID14101062Long-form Identifiermindat:1:5:14101062:7
GUID0
Full ReferenceWatanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3. Physical Review B, 38 (8) 5677-5683 doi:10.1103/physrevb.38.5677
Plain TextWatanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3. Physical Review B, 38 (8) 5677-5683 doi:10.1103/physrevb.38.5677
In(1988, September) Physical Review B Vol. 38 (8) American Physical Society (APS)

See Also

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Watanabe, Yuichi, Kaneko, Shuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1989) Imperfections in amorphous chalcogenides. IV. A model of electrical conduction processes in amorphous and crystallineIn2Se3. Physical Review B, 40 (5) 3133-3142 doi:10.1103/physrevb.40.3133
Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 38 (8) 5668-5676 doi:10.1103/physrevb.38.5668
Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1990) Erratum: Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 41 (17) 12284 doi:10.1103/physrevb.41.12284
Kawazoe, H., Yanagita, H., Watanabe, Y., Yamane, M. (1988) Imperfections in amorphous chalcogenides. I. Electrically neutral defects in liquid sulfur and arsenic sulfides. Physical Review B, 38 (8) 5661-5667 doi:10.1103/physrevb.38.5661
Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1987) Electronic structures and gap states in amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 95. 365-372 doi:10.1016/s0022-3093(87)80132-1
Mahan, G. D. (1988) Model for minority-carrier band-gap states in semiconductors. Physical Review B, 38 (17) 12436-12442 doi:10.1103/physrevb.38.12436
Wilson, B. A. (1981) Above-band-gap emission in amorphous semiconductors: Localized states versus surface contamination. Physical Review B, 23 (6) 3102-3105 doi:10.1103/physrevb.23.3102
Kastner, Marc, Adler, David, Fritzsche, H. (1976) Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors. Physical Review Letters, 37 (22). 1504-1507 doi:10.1103/physrevlett.37.1504
Yamakawa, Youichi, Kontani, Hiroshi (2015) Quasiparticle interference in Fe-based superconductors based on a five-orbital tight-binding model. Physical Review B, 92 (4) doi:10.1103/physrevb.92.045124
Priester, C., Allan, G., Lannoo, M. (1988) Self-consistent band-edge deformation potentials in a tight-binding framework. Physical Review B, 38 (18) 13451-13452 doi:10.1103/physrevb.38.13451
Schein, L. B. (1974) Charge generation from band-gap states in amorphous selenium films. Physical Review B, 10 (8) 3451-3457 doi:10.1103/physrevb.10.3451
 
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