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Baraff, G. A., Lannoo, M., Schlüter, M. (1988) EL2 and the electronic structure of theAsGa-Asipair in GaAs: The role of lattice distortion in the properties of the normal state. Physical Review B, 38 (9) 6003-6014 doi:10.1103/physrevb.38.6003

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Reference TypeJournal (article/letter/editorial)
TitleEL2 and the electronic structure of theAsGa-Asipair in GaAs: The role of lattice distortion in the properties of the normal state
JournalPhysical Review B
AuthorsBaraff, G. A.Author
Lannoo, M.Author
Schlüter, M.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6003Search in ResearchGate
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Mindat Ref. ID14101110Long-form Identifiermindat:1:5:14101110:5
GUID0
Full ReferenceBaraff, G. A., Lannoo, M., Schlüter, M. (1988) EL2 and the electronic structure of theAsGa-Asipair in GaAs: The role of lattice distortion in the properties of the normal state. Physical Review B, 38 (9) 6003-6014 doi:10.1103/physrevb.38.6003
Plain TextBaraff, G. A., Lannoo, M., Schlüter, M. (1988) EL2 and the electronic structure of theAsGa-Asipair in GaAs: The role of lattice distortion in the properties of the normal state. Physical Review B, 38 (9) 6003-6014 doi:10.1103/physrevb.38.6003
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

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Baraff, G. A., Schluter, M. (1987) Electronic structure and binding energy of theAsGa-Asipair in GaAs: EL2 and the mobility of interstitial arsenic. Physical Review B, 35 (12) 6154-6164 doi:10.1103/physrevb.35.6154
Delerue, C., Lannoo, M. (1988) Atomic configuration and electronic properties of the metastable state of theEL2 center in GaAs. Physical Review B, 38 (6) 3966-3972 doi:10.1103/physrevb.38.3966
Baraff, G.A., Schluter, M., Lannoo, Michel (1991) EL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction. Materials Science Forum, 38. 91-96 doi:10.4028/www.scientific.net/msf.38-41.91
Lannoo, M., Baraff, G. A., Schlüter, M. (1981) Multiplet splittings and Jahn-Teller energies for the vacancy in silicon. Physical Review B, 24 (2) 955-963 doi:10.1103/physrevb.24.955
Bachelet, Giovanni B., Baraff, G. A., Schlüter, M. (1981) Self-consistent calculations of the electronic structure for ideal Ga and As vacancies in GaAs. Physical Review B, 24 (2) 915-925 doi:10.1103/physrevb.24.915
Baraff, G. A., Schlüter, M. (1979) New self-consistent approach to the electronic structure of localized defects in solids. Physical Review B, 19 (10) 4965-4979 doi:10.1103/physrevb.19.4965
Baraff, G. A., Schlüter, M. (1985) Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs. Physical Review Letters, 55 (12). 1327-1330 doi:10.1103/physrevlett.55.1327
Lannoo, M. (1987) Unexplored properties of defects with triply degenerate gap states in semiconductors: The role of lattice distortion. Physical Review B, 36 (17) 9355-9357 doi:10.1103/physrevb.36.9355
Lannoo, M., Baraff, G. A., Schlüter, M., Tomanek, D. (1991) Jahn-Teller effect for the negatively chargedC60molecule: Analogy with the silicon vacancy. Physical Review B, 44 (21) 12106-12108 doi:10.1103/physrevb.44.12106
Baraff, G. A., Schlüter, M. (1986) Binding and formation energies of native defect pairs in GaAs. Physical Review B, 33 (10) 7346-7348 doi:10.1103/physrevb.33.7346
Lannoo, M., Baraff, G. A., Schlüter, M., Tománek, D. (1992) Reply to ‘‘Comment on ‘Jahn-Teller effect for the negatively chargedC60molecule: Analogy with the silicon vacancy’ ’’. Physical Review B, 46 (21) 14264-14265 doi:10.1103/physrevb.46.14264
 
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