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Fasol, G., Tanaka, M., Sakaki, H., Horikoshi, Y. (1988) Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells. Physical Review B, 38 (9) 6056-6065 doi:10.1103/physrevb.38.6056

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Reference TypeJournal (article/letter/editorial)
TitleInterface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells
JournalPhysical Review B
AuthorsFasol, G.Author
Tanaka, M.Author
Sakaki, H.Author
Horikoshi, Y.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6056Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101114Long-form Identifiermindat:1:5:14101114:3
GUID0
Full ReferenceFasol, G., Tanaka, M., Sakaki, H., Horikoshi, Y. (1988) Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells. Physical Review B, 38 (9) 6056-6065 doi:10.1103/physrevb.38.6056
Plain TextFasol, G., Tanaka, M., Sakaki, H., Horikoshi, Y. (1988) Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells. Physical Review B, 38 (9) 6056-6065 doi:10.1103/physrevb.38.6056
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

See Also

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Fasol, G., Tanaka, M., Sakaki, H., Horikoshi, Y. (1989) Interface roughness and confined LO phonons in quantum wells. Journal of Crystal Growth, 95 (1). 75-78 doi:10.1016/0022-0248(89)90355-2
Tanaka, Masaaki, Sakaki, Hiroyuki (1988) Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy:  Misorientation effects. Journal of Applied Physics, 64 (9). 4503-4508 doi:10.1063/1.341277
Oberli, D. Y., Böhm, G., Weimann, G. (1993) Role of interface optical phonons in cooling hot carriers in GaAs-AlAs quantum wells. Physical Review B, 47 (12) 7630-7633 doi:10.1103/physrevb.47.7630
Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., Matsusue, T. (1987) Interface roughness scattering in GaAs/AlAs quantum wells. Applied Physics Letters, 51 (23). 1934-1936 doi:10.1063/1.98305
Mowbray, D. J., Cardona, M., Ploog, K. (1991) Confined LO phonons in GaAs/AlAs superlattices. Physical Review B, 43 (2) 1598-1603 doi:10.1103/physrevb.43.1598
Alexandrou, A., Cardona, M., Ploog, K. (1988) Doubly and triply resonant raman scattering by LO phonons in GaAs/AlAs superlattices. Physical Review B, 38 (3) 2196-2199 doi:10.1103/physrevb.38.2196
Leosson, K., Jensen, J. R., Langbein, W., Hvam, J. M. (2000) Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells. Physical Review B, 61 (15) 10322-10329 doi:10.1103/physrevb.61.10322
Shields, A. J., Chamberlain, M. P., Cardona, M., Eberl, K. (1995) Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells. Physical Review B, 51 (24) 17728-17739 doi:10.1103/physrevb.51.17728
Noda, T., Tanaka, M., Sakaki, H. (1990) Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement. Applied Physics Letters, 57 (16). 1651-1653 doi:10.1063/1.104077
Fu, L. P., Schmiedel, T., Petrou, A., Dutta, M., Newman, P. G., Stroscio, M. A. (1992) Raman study of interface phonons in GaAs/AlAs quantum wells: Resonance with thee2-h2exciton. Physical Review B, 46 (11) 7196-7199 doi:10.1103/physrevb.46.7196
Hirakawa, K., Noda, T., Sakaki, H. (1988) Interface roughness in AlAs/GaAs quantum wells characterized by the mobility of two-dimensional electrons. Surface Science, 196 (1). 365-366 doi:10.1016/0039-6028(88)90710-8
 
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