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Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., Hollinger, G. (1988) Microscopic structure of theSiO2/Si interface. Physical Review B, 38 (9) 6084-6096 doi:10.1103/physrevb.38.6084

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Reference TypeJournal (article/letter/editorial)
TitleMicroscopic structure of theSiO2/Si interface
JournalPhysical Review B
AuthorsHimpsel, F. J.Author
McFeely, F. R.Author
Taleb-Ibrahimi, A.Author
Yarmoff, J. A.Author
Hollinger, G.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6084Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101117Long-form Identifiermindat:1:5:14101117:4
GUID0
Full ReferenceHimpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., Hollinger, G. (1988) Microscopic structure of theSiO2/Si interface. Physical Review B, 38 (9) 6084-6096 doi:10.1103/physrevb.38.6084
Plain TextHimpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., Hollinger, G. (1988) Microscopic structure of theSiO2/Si interface. Physical Review B, 38 (9) 6084-6096 doi:10.1103/physrevb.38.6084
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

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Rieger, D., Himpsel, F. J., Karlsson, U. O., McFeely, F. R., Morar, J. F., Yarmoff, J. A. (1986) Electronic structure of theCaF2/Si(111) interface. Physical Review B, 34 (10) 7295-7306 doi:10.1103/physrevb.34.7295
Yarmoff, J. A., Clarke, D. R., Drube, W., Karlsson, U. O., Taleb-Ibrahimi, A., Himpsel, F. J. (1987) Valence electronic structure ofY1Ba2Cu3O7. Physical Review B, 36 (7) 3967-3970 doi:10.1103/physrevb.36.3967
Morar, J. F., Meyerson, B. S., Karlsson, U. O., Himpsel, F. J., McFeely, F. R., Rieger, D., Talebā€Ibrahimi, A., Yarmoff, J. A. (1987) Oxygen removal from Si via reaction with adsorbed Ge. Applied Physics Letters, 50 (8). 463-465 doi:10.1063/1.98174
Yarmoff, J. A., Taleb-Ibrahimi, A., McFeely, F. R., Avouris, Ph. (1988) Chemical selectivity in photon-stimulated desorption of fluorine from silicon. Physical Review Letters, 60 (10). 960-963 doi:10.1103/physrevlett.60.960
Morar, J. F., Himpsel, F. J., Hollinger, G., Jordon, J. L., Hughes, G., McFeely, F. R. (1986) C1sexcitation studies of diamond (111) II. Unoccupied surface states. Physical Review B, 33 (2) 1346-1349 doi:10.1103/physrevb.33.1346
Morar, J. F., Himpsel, F. J., Hollinger, G., Jordan, J. L., Hughes, G., McFeely, F. R. (1986) C 1sexcitation studies of diamond (111) I. Surface core levels. Physical Review B, 33 (2) 1340-1345 doi:10.1103/physrevb.33.1340
Karlsson, U. O., Himpsel, F. J., Morar, J. F., McFeely, F. R., Rieger, D., Yarmoff, J. A. (1986) Formation of a New Ordered Structure of CaF2/Si(111) by Ultraviolet Irradiation. Physical Review Letters, 57 (10). 1247-1250 doi:10.1103/physrevlett.57.1247
Yarmoff, J. A., McFeely, F. R. (1988) Effect of sample doping level during etching of silicon by fluorine atoms. Physical Review B, 38 (3) 2057-2062 doi:10.1103/physrevb.38.2057
Himpsel, F. J., Morar, J. F., McFeely, F. R., Pollak, R. A., Hollinger, Guy (1984) Core-level shifts and oxidation states of Ta and W: Electron spectroscopy for chemical analysis applied to surfaces. Physical Review B, 30 (12) 7236-7241 doi:10.1103/physrevb.30.7236
Schmeisser, D., Himpsel, F. J., Hollinger, G. (1983) Chemisorption ofH2O on Si(100) Physical Review B, 27 (12) 7813-7816 doi:10.1103/physrevb.27.7813
Himpsel, F. J., Hollinger, G., Pollak, R. A. (1983) Determination of the Fermi-level pinning position at Si(111) surfaces. Physical Review B, 28 (12) 7014-7018 doi:10.1103/physrevb.28.7014
 
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