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Holtz, M., Zallen, R., Brafman, O. (1988) Resonant Raman-active acoustic phonons in ion-implanted GaAs. Physical Review B, 38 (9) 6097-6106 doi:10.1103/physrevb.38.6097

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Reference TypeJournal (article/letter/editorial)
TitleResonant Raman-active acoustic phonons in ion-implanted GaAs
JournalPhysical Review B
AuthorsHoltz, M.Author
Zallen, R.Author
Brafman, O.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6097Search in ResearchGate
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Mindat Ref. ID14101118Long-form Identifiermindat:1:5:14101118:1
GUID0
Full ReferenceHoltz, M., Zallen, R., Brafman, O. (1988) Resonant Raman-active acoustic phonons in ion-implanted GaAs. Physical Review B, 38 (9) 6097-6106 doi:10.1103/physrevb.38.6097
Plain TextHoltz, M., Zallen, R., Brafman, O. (1988) Resonant Raman-active acoustic phonons in ion-implanted GaAs. Physical Review B, 38 (9) 6097-6106 doi:10.1103/physrevb.38.6097
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

See Also

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Holtz, M., Zallen, R., Brafman, O. (1988) Resonant Raman-active acoustic phonons in the mixed amorphous-microcrystalline phase of ion-implanted GaAs. Physical Review B, 37 (5) 2737-2740 doi:10.1103/physrevb.37.2737
Holtz, M., Zallen, R., Brafman, O., Matteson, S. (1988) Raman-scattering depth profile of the structure of ion-implanted GaAs. Physical Review B, 37 (9) 4609-4617 doi:10.1103/physrevb.37.4609
Brafman, O., Manor, R. (1995) Raman line asymmetry in alloys and in ion-implanted polar crystals. Physical Review B, 51 (11) 6940-6946 doi:10.1103/physrevb.51.6940
Sauncy, T., Holtz, M., Zallen, R. (1994) Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs. Physical Review B, 50 (15) 10702-10705 doi:10.1103/physrevb.50.10702
Alexandrou, A., Cardona, M., Ploog, K. (1988) Doubly and triply resonant raman scattering by LO phonons in GaAs/AlAs superlattices. Physical Review B, 38 (3) 2196-2199 doi:10.1103/physrevb.38.2196
Feng, G. F., Zallen, R. (1989) Optical properties of ion-implanted GaAs: The observation of finite-size effects in GaAs microcrystals. Physical Review B, 40 (2) 1064-1073 doi:10.1103/physrevb.40.1064
Cohen, H., Brafman, O., Ehrenfreund, E. (1989) Resonant Raman scattering from diluted polyacetylene chains. Physical Review B, 39 (9) 5899-5906 doi:10.1103/physrevb.39.5899
Holtz, M., Syassen, K., Ploog, K. (1989) Folded-acoustic phonons in GaAs/AlAs thin-layer superlattices under high pressure. Physical Review B, 40 (5) 2988-2991 doi:10.1103/physrevb.40.2988
Bajema, K., Merlin, R. (1987) Raman scattering by acoustic phonons in Fibonacci GaAs-AIAs superlattices. Physical Review B, 36 (8) 4555-4557 doi:10.1103/physrevb.36.4555
Trallero-Giner, C., Alexandrou, A., Cardona, M. (1988) Exciton effects in stress-induced doubly resonant Raman scattering: GaAs. Physical Review B, 38 (15) 10744-10748 doi:10.1103/physrevb.38.10744
Holtz, M., Seon, M., Brafman, O., Manor, R., Fekete, D. (1996) Pressure dependence of the optic phonon energies inAlxGa1−xAs. Physical Review B, 54 (12) 8714-8720 doi:10.1103/physrevb.54.8714
 
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