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Makadsi, M. N., Alias, M. F. A. (1988) Effect of doping percentages on the conductivity and energy gap ofa-Si thin films. Physical Review B, 38 (9) 6143-6146 doi:10.1103/physrevb.38.6143

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Reference TypeJournal (article/letter/editorial)
TitleEffect of doping percentages on the conductivity and energy gap ofa-Si thin films
JournalPhysical Review B
AuthorsMakadsi, M. N.Author
Alias, M. F. A.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6143Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101123Long-form Identifiermindat:1:5:14101123:5
GUID0
Full ReferenceMakadsi, M. N., Alias, M. F. A. (1988) Effect of doping percentages on the conductivity and energy gap ofa-Si thin films. Physical Review B, 38 (9) 6143-6146 doi:10.1103/physrevb.38.6143
Plain TextMakadsi, M. N., Alias, M. F. A. (1988) Effect of doping percentages on the conductivity and energy gap ofa-Si thin films. Physical Review B, 38 (9) 6143-6146 doi:10.1103/physrevb.38.6143
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

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Vieira, S., Ramos, M. A., Vallet-Regí, M., Gonzalez-Calbet, J. M. (1988) Tunneling measurements of the energy gap inBi4Ca3Sr3Cu4O16+δ. Physical Review B, 38 (13) 9295-9298 doi:10.1103/physrevb.38.9295
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