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Weman, H., Zhao, Q. X., Monemar, B. (1988) Electric-field-induced quenching of shallow and deep bound excitons in silicon. Physical Review B, 38 (9) 6185-6190 doi:10.1103/physrevb.38.6185

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Reference TypeJournal (article/letter/editorial)
TitleElectric-field-induced quenching of shallow and deep bound excitons in silicon
JournalPhysical Review B
AuthorsWeman, H.Author
Zhao, Q. X.Author
Monemar, B.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6185Search in ResearchGate
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Mindat Ref. ID14101129Long-form Identifiermindat:1:5:14101129:7
GUID0
Full ReferenceWeman, H., Zhao, Q. X., Monemar, B. (1988) Electric-field-induced quenching of shallow and deep bound excitons in silicon. Physical Review B, 38 (9) 6185-6190 doi:10.1103/physrevb.38.6185
Plain TextWeman, H., Zhao, Q. X., Monemar, B. (1988) Electric-field-induced quenching of shallow and deep bound excitons in silicon. Physical Review B, 38 (9) 6185-6190 doi:10.1103/physrevb.38.6185
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

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Zhao, Q. X., Weman, H., Monemar, B. (1988) Impact ionization of free excitons and electron-hole droplets in silicon in weak electric and magnetic fields. Physical Review B, 38 (12) 8529-8532 doi:10.1103/physrevb.38.8529
Weman, H., Godlewski, M., Monemar, B. (1988) Optical detection of microwave-induced impact ionization of bound excitons in silicon. Physical Review B, 38 (17) 12525-12530 doi:10.1103/physrevb.38.12525
Weman, H., Zhao, Q. X., Monemar, B. (1987) Impact ionization of excitons and electron-hole droplets in silicon. Physical Review B, 36 (9) 5054-5057 doi:10.1103/physrevb.36.5054
Chen, W. M., Awadelkarim, O. O., Weman, H., Monemar, B. (1989) Optically detected magnetic resonance of a thermally induced deep center in electron-irradiated silicon. Physical Review B, 40 (14) 10013-10016 doi:10.1103/physrevb.40.10013
Zhao, Q.X., Weman, H., Monemar, B. (1988) Luminescence in silicon in electric and magnetic fields. Journal of Luminescence, 40. 151-152 doi:10.1016/0022-2313(88)90132-9
Zhao, Q. X., Bergman, P., Monemar, B. (1988) Electronic structure of the 2.087-eV bound exciton related to theLii-LiGa-OPcomplex defect in GaP. Physical Review B, 38 (12) 8383-8389 doi:10.1103/physrevb.38.8383
Darici, Y., Wolfram, T., Chandrasekhar, H. R., Cowan, D. (1988) Electric field effects on excitons and shallow donor impurities. Physical Review B, 38 (14) 9686-9693 doi:10.1103/physrevb.38.9686
Chen, W. M., Awadelkarim, O. O., Weman, H., Monemar, B. (1990) Intensity of exciton luminescence in silicon in a weak magnetic field. Physical Review B, 42 (8) 5120-5125 doi:10.1103/physrevb.42.5120
Zhao, Q. X., Monemar, B. (1988) Electronic structure of the substitutional nitrogenNN1pair in GaP from photoluminescence excitation and Zeeman spectroscopy. Physical Review B, 38 (2) 1397-1405 doi:10.1103/physrevb.38.1397
Weman, H., Monemar, B., Oehrlein, G. S., Jeng, S. J. (1990) Strain-induced quantum confinement of carriers due to extended defects in silicon. Physical Review B, 42 (5) 3109-3112 doi:10.1103/physrevb.42.3109
Awadelkarim, O. O., Chen, W. M., Weman, H., Monemar, B. (1990) Defect annealing in electron-irradiated boron-doped silicon. Physical Review B, 41 (2) 1019-1027 doi:10.1103/physrevb.41.1019
 
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