Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Menéndez, J. (1988) Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. Physical Review B, 38 (9) 6305-6307 doi:10.1103/physrevb.38.6305

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level
JournalPhysical Review B
AuthorsMenéndez, J.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101147Long-form Identifiermindat:1:5:14101147:1
GUID0
Full ReferenceMenéndez, J. (1988) Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. Physical Review B, 38 (9) 6305-6307 doi:10.1103/physrevb.38.6305
Plain TextMenéndez, J. (1988) Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. Physical Review B, 38 (9) 6305-6307 doi:10.1103/physrevb.38.6305
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Farid, B., Daling, R., Lenstra, D., van Haeringen, W. (1988) GWapproach to the calculation of electron self-energies in semiconductors. Physical Review B, 38 (11) 7530-7534 doi:10.1103/physrevb.38.7530
Walukiewicz, W. (1988) Mechanism of Fermi-level stabilization in semiconductors. Physical Review B, 37 (9) 4760-4763 doi:10.1103/physrevb.37.4760
Oliva, J. (1988) Response to "Screening of a point charge in semiconductors and insulators". Physical Review B, 38 (1) 819 doi:10.1103/physrevb.38.819
O'Connor, P., Tauc, J. (1982) Photoinduced midgap absorption in tetrahedrally bonded amorphous semiconductors. Physical Review B, 25 (4) 2748-2766 doi:10.1103/physrevb.25.2748
Nolte, D. D. (1998) Mesoscopic pointlike defects in semiconductors: Deep-level energies. Physical Review B, 58 (12) 7994-8001 doi:10.1103/physrevb.58.7994
Dreyhsig, J., Gumlich, H.-E., Allen, J. W. (1993) Spin-dependent multiplet average energies for 3dNimpurities in tetrahedral semiconductors and a comparison with spin-polarized mean-field calculations. Physical Review B, 48 (20) 15002-15015 doi:10.1103/physrevb.48.15002
Herbst, J. F., Wilkins, J. W. (1988) Relativistic calculations of 2pand 3dexcitation energies in the actinide metals. Physical Review B, 38 (2) 1027-1039 doi:10.1103/physrevb.38.1027
Elegba, S. B., Rashid, M. A. (1988) Comment on ‘‘A peculiar relation between mass and energy with respect to the Schrödinger equation’’. Physical Review D, 38 (9). 2911-2912 doi:10.1103/physrevd.38.2911
Čápek, V. (1988) Parallel channel to the Boltzmann band conduction: Scattering by charged screened impurities in semiconductors. Physical Review B, 38 (18) 13426-13428 doi:10.1103/physrevb.38.13426
Maley, N., Beeman, D., Lannin, J. S. (1988) Dynamics of tetrahedral networks: Amorphous Si and Ge. Physical Review B, 38 (15) 10611-10622 doi:10.1103/physrevb.38.10611
Enderlein, R., Harrison, W. A. (1984) Solid-state shifts of core-electron binding energies in tetrahedral semiconductors from tight-binding theory. Physical Review B, 30 (4) 1867-1873 doi:10.1103/physrevb.30.1867
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 7, 2026 08:22:37
Go to top of page