| Reference Type | Journal (article/letter/editorial) |
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| Title | Defect parameters obtained from positron-annihilation and self-diffusion experiments in silicon |
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| Journal | Physical Review B |
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| Authors | Varotsos, P. | Author |
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| Eftaxias, K. | Author |
| Hadjicontis, V. | Author |
| Year | 1988 (September 15) | Volume | 38 |
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| Issue | 9 |
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| Publisher | American Physical Society (APS) |
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| DOI | doi:10.1103/physrevb.38.6328Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 14101156 | Long-form Identifier | mindat:1:5:14101156:3 |
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|
| GUID | 0 |
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| Full Reference | Varotsos, P., Eftaxias, K., Hadjicontis, V. (1988) Defect parameters obtained from positron-annihilation and self-diffusion experiments in silicon. Physical Review B, 38 (9) 6328-6329 doi:10.1103/physrevb.38.6328 |
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| Plain Text | Varotsos, P., Eftaxias, K., Hadjicontis, V. (1988) Defect parameters obtained from positron-annihilation and self-diffusion experiments in silicon. Physical Review B, 38 (9) 6328-6329 doi:10.1103/physrevb.38.6328 |
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| In | (1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS) |
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