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Chen, Y., Nannarone, S., Schaefer, J., Hermanson, J. C., Lapeyre, G. J. (1989) Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces. Physical Review B, 39 (11) 7653-7658 doi:10.1103/physrevb.39.7653

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Reference TypeJournal (article/letter/editorial)
TitleCoupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces
JournalPhysical Review B
AuthorsChen, Y.Author
Nannarone, S.Author
Schaefer, J.Author
Hermanson, J. C.Author
Lapeyre, G. J.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.7653Search in ResearchGate
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Mindat Ref. ID14101506Long-form Identifiermindat:1:5:14101506:6
GUID0
Full ReferenceChen, Y., Nannarone, S., Schaefer, J., Hermanson, J. C., Lapeyre, G. J. (1989) Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces. Physical Review B, 39 (11) 7653-7658 doi:10.1103/physrevb.39.7653
Plain TextChen, Y., Nannarone, S., Schaefer, J., Hermanson, J. C., Lapeyre, G. J. (1989) Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces. Physical Review B, 39 (11) 7653-7658 doi:10.1103/physrevb.39.7653
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Chen, Y., Hermanson, J. C., Lapeyre, G. J. (1989) Coupled plasmon and phonon in the accumulation layer of InAs(110) cleaved surfaces. Physical Review B, 39 (17) 12682-12687 doi:10.1103/physrevb.39.12682
Meng, Yuan, Anderson, J. R., Hermanson, J. C., Lapeyre, G. J. (1991) Hole plasmon excitations on ap-type GaAs(110) surface. Physical Review B, 44 (8) 4040-4043 doi:10.1103/physrevb.44.4040
Yu, Hong, Hermanson, J. C. (1990) Subband structure and plasmon-phonon coupled excitations in the accumulation layer of ZnO. Physical Review B, 41 (9) 5991-6000 doi:10.1103/physrevb.41.5991
Nannarone, S., D’Addato, S., Schaefer, J. A., Chen, Yu, Lapeyre, G. J. (1989) Anisotropy of the electronic structures of the GaP(110) surface: A high-resolution electron-energy-loss spectroscopy study. Physical Review B, 39 (9) 5975-5979 doi:10.1103/physrevb.39.5975
Yu, Hong, Hermanson, J. C. (1989) Collective excitations in the accumulation layer of InAs(110): Nonlocal response theory. Physical Review B, 40 (17) 11851-11861 doi:10.1103/physrevb.40.11851
Nannarone, S., D’Addato, S., Betti, M. G., del Pennino, U., Chen, Yu, Samonto, P., Lapeyre, G. J. (1991) Inelastic-electron-scattering investigation of clean and hydrogen-exposed InP(110) surfaces. Physical Review B, 43 (12) 9818-9822 doi:10.1103/physrevb.43.9818
Meng, Yuan, Lapeyre, G. J. (1992) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily dopedp-type GaAs(110) surfaces. Physical Review B, 45 (3) 1500-1503 doi:10.1103/physrevb.45.1500
Joyce, J. J., Anderson, J., Nelson, M. M., Lapeyre, G. J. (1989) Growth morphology and electronic structure of the Bi/GaAs(110) interface. Physical Review B, 40 (15) 10412-10419 doi:10.1103/physrevb.40.10412
Koch, R. J., Seyller, Th., Schaefer, J. A. (2010) Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem. Physical Review B, 82 (20) doi:10.1103/physrevb.82.201413
Persson, B. N. J., Ping, J. G., Xu, Y. B., Frankel, D., Chen, Y., Lapeyre, G. J. (1989) Inelastic scattering of electrons from accumulation and inversion layers. Physical Review B, 40 (11) 7819-7824 doi:10.1103/physrevb.40.7819
Yu, Hong, Hermanson, J. C. (1991) Collective electronic excitations in GaAs/AlxGa1−xAs quantum wells. Physical Review B, 43 (5) 4340-4343 doi:10.1103/physrevb.43.4340
 
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