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Mårtensson, P., Feenstra, R. M. (1989) Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy. Physical Review B, 39 (11) 7744-7753 doi:10.1103/physrevb.39.7744

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Reference TypeJournal (article/letter/editorial)
TitleGeometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy
JournalPhysical Review B
AuthorsMårtensson, P.Author
Feenstra, R. M.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.7744Search in ResearchGate
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Mindat Ref. ID14101515Long-form Identifiermindat:1:5:14101515:8
GUID0
Full ReferenceMårtensson, P., Feenstra, R. M. (1989) Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy. Physical Review B, 39 (11) 7744-7753 doi:10.1103/physrevb.39.7744
Plain TextMårtensson, P., Feenstra, R. M. (1989) Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy. Physical Review B, 39 (11) 7744-7753 doi:10.1103/physrevb.39.7744
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Feenstra, R. M. (1989) Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopy. Physical Review Letters, 63 (13). 1412-1415 doi:10.1103/physrevlett.63.1412
Stroscio, Joseph A., Feenstra, R. M., Fein, A. P. (1987) Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning tunneling microscopy. Physical Review B, 36 (14) 7718-7721 doi:10.1103/physrevb.36.7718
Feenstra, R. M., Mårtensson, P. (1988) Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy. Physical Review Letters, 61 (4). 447-450 doi:10.1103/physrevlett.61.447
Feenstra, R. M., Fein, A. P. (1985) Surface morphology of GaAs(110) by scanning tunneling microscopy. Physical Review B, 32 (2) 1394-1396 doi:10.1103/physrevb.32.1394
Shih, C. K., Kaxiras, Efthimios, Feenstra, R. M., Pandey, K. C. (1989) Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface. Physical Review B, 40 (14) 10044-10047 doi:10.1103/physrevb.40.10044
Avouris, Ph., Wolkow, R. (1989) Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy. Physical Review B, 39 (8) 5091-5100 doi:10.1103/physrevb.39.5091
Mårtensson, P., Feenstra, R. M. (1988) Voltage-dependent imaging of antimony on the GaAs(110) surface. Journal of Microscopy, 152 (3). 761-769 doi:10.1111/j.1365-2818.1988.tb01447.x
Feenstra, R. M., Lutz, M. A. (1990) Formation of the 5×5 reconstruction on cleaved Si(111) surfaces studied by scanning tunneling microscopy. Physical Review B, 42 (8) 5391-5394 doi:10.1103/physrevb.42.5391
Trafas, B. M., Hill, D. M., Siefert, R. L., Weaver, J. H. (1990) Adsorption and interaction of Sm on GaAs(110) studied by scanning tunneling microscopy. Physical Review B, 42 (5) 3231-3234 doi:10.1103/physrevb.42.3231
Stroscio, Joseph A., Feenstra, R. M., Fein, A. P. (1986) Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy. Physical Review Letters, 57 (20). 2579-2582 doi:10.1103/physrevlett.57.2579
Shih, C. K., Feenstra, R. M., Kirtley, J. R., Chandrashekhar, G. V. (1989) Surface structural and electronic properties of cleaved single crystals ofBi2.15Sr1.7CaCu2O8+δcompounds: A scanning tunneling microscopy study. Physical Review B, 40 (4) 2682-2685 doi:10.1103/physrevb.40.2682
 
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