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Pavesi, L., Tuncel, E., Zimmermann, B., Reinhart, F. K. (1989) Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices. Physical Review B, 39 (11) 7788-7795 doi:10.1103/physrevb.39.7788

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices
JournalPhysical Review B
AuthorsPavesi, L.Author
Tuncel, E.Author
Zimmermann, B.Author
Reinhart, F. K.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.7788Search in ResearchGate
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Mindat Ref. ID14101520Long-form Identifiermindat:1:5:14101520:2
GUID0
Full ReferencePavesi, L., Tuncel, E., Zimmermann, B., Reinhart, F. K. (1989) Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices. Physical Review B, 39 (11) 7788-7795 doi:10.1103/physrevb.39.7788
Plain TextPavesi, L., Tuncel, E., Zimmermann, B., Reinhart, F. K. (1989) Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices. Physical Review B, 39 (11) 7788-7795 doi:10.1103/physrevb.39.7788
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Tuncel, E., Pavesi, L., Martin, D., Reinhart, F. K. (1988) Localized and extended states inGaAsAlxGa1−xAssuperlattices probed by resonant optical excitation. Physical Review B, 38 (2) 1597-1600 doi:10.1103/physrevb.38.1597
Pavesi, L., Martin, D., Reinhart, F. K. (1989) Comparative photoluminescence study of hydrogenation of GaAs, AlxGa1−xAs, and AlAs. Applied Physics Letters, 55 (5). 475-477 doi:10.1063/1.101857
Kukushkin, I. V., von Klitzing, K., Ploog, K., Timofeev, V. B. (1989) Radiative recombination of two-dimensional electrons in acceptorδ-doped GaAs-AlxGa1−xAs single heterojunctions. Physical Review B, 40 (11) 7788-7792 doi:10.1103/physrevb.40.7788
Pavesi, L., Reinhart, F. K. (1990) Periodic and purposely disordered superlattices: The effect of continuous and discrete disorder distribution. Physical Review B, 42 (17) 11362-11365 doi:10.1103/physrevb.42.11362
Pavesi, L., Giannozzi, P., Reinhart, F. K. (1990) Amphoteric behavior ofH0in GaAs. Physical Review B, 42 (3) 1864-1867 doi:10.1103/physrevb.42.1864
Shi, J. M., Peeters, F. M., Devreese, J. T. (1995) D−states in GaAs/AlxGa1−xAs superlattices in a magnetic field. Physical Review B, 51 (12) 7714-7724 doi:10.1103/physrevb.51.7714
He, L. X., Martin, K. P., Higgins, R. J. (1989) Infrared quenching of persistent photoconductivity in GaAs/AlxGa1−xAs heterostructures. Physical Review B, 39 (3) 1808-1818 doi:10.1103/physrevb.39.1808
Kauschke, W., Sood, A. K., Cardona, M., Ploog, K. (1987) Resonance Raman scattering in GaAs-AlxGa1−xAs superlattices: Impurity-induced Fröhlich-interaction scattering. Physical Review B, 36 (3) 1612-1619 doi:10.1103/physrevb.36.1612
Wu, Ji- Wei (1989) Many-body optical-edge singularity in absorption spectra of GaAs/AlxGa1−xAs modulation-doped quantum wells. Physical Review B, 39 (11) 7992-7995 doi:10.1103/physrevb.39.7992
Kahen, K. B., Leburton, J. P. (1986) Optical constants of GaAs-AlxGa1−xAs superlattices and multiple quantum wells. Physical Review B, 33 (8) 5465-5472 doi:10.1103/physrevb.33.5465
Fortin, E., Hua, B. Y., Roth, A. P. (1989) Electro-optical effects inInxGa1−xAs/GaAs strained-layer superlattices. Physical Review B, 39 (15) 10887-10891 doi:10.1103/physrevb.39.10887
 
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