Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Taguchi, Akihito, Ohno, Takahisa (1989) Interface electronic structures in an InAs/GaAs lattice-mismatched system. Physical Review B, 39 (11) 7803-7810 doi:10.1103/physrevb.39.7803

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInterface electronic structures in an InAs/GaAs lattice-mismatched system
JournalPhysical Review B
AuthorsTaguchi, AkihitoAuthor
Ohno, TakahisaAuthor
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.7803Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101522Long-form Identifiermindat:1:5:14101522:6
GUID0
Full ReferenceTaguchi, Akihito, Ohno, Takahisa (1989) Interface electronic structures in an InAs/GaAs lattice-mismatched system. Physical Review B, 39 (11) 7803-7810 doi:10.1103/physrevb.39.7803
Plain TextTaguchi, Akihito, Ohno, Takahisa (1989) Interface electronic structures in an InAs/GaAs lattice-mismatched system. Physical Review B, 39 (11) 7803-7810 doi:10.1103/physrevb.39.7803
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Taguchi, Akihito, Ohno, Takahisa (1988) Electronic structure of (InAs)m(GaAs)m(m=1–7) strained superlattices. Physical Review B, 38 (3) 2038-2043 doi:10.1103/physrevb.38.2038
Taguchi, Akihito, Ohno, Takahisa (1987) Self-consistent pseudopotential calculation for the electronic structure of a (InAs)1(GaAs)1monolayer superlattice. Physical Review B, 36 (3) 1696-1702 doi:10.1103/physrevb.36.1696
Taguchi, Akihito, Ohno, Takahisa, Sasaki, Taizo (2000) Fluorine atoms in AlAs, GaAs, and InAs: Stable state, diffusion, and carrier passivation. Physical Review B, 62 (3) 1821-1827 doi:10.1103/physrevb.62.1821
Taguchi, Akihito, Ohno, Takahisa (1997) Erbium in GaAs: Coupling with native defects. Physical Review B, 56 (15) 9477-9487 doi:10.1103/physrevb.56.9477
Ohno, Takahisa (1988) Stability of the (InAs)1/(GaAs)1monolayer superlattice. Physical Review B, 38 (18) 13191-13196 doi:10.1103/physrevb.38.13191
Ohno, Takahisa (1992) Structure of the Al-GaAs(001) interface at the initial stage of Al adsorption. Physical Review B, 45 (7) 3516-3520 doi:10.1103/physrevb.45.3516
Ohno, Takahisa (1991) Sulfur passivation of GaAs surfaces. Physical Review B, 44 (12) 6306-6311 doi:10.1103/physrevb.44.6306
Taguchi, Akihito, Ohno, Takahisa (1995) Total Energy Calculation for Er Impurity in GaAs. Materials Science Forum, 196. 627-632 doi:10.4028/www.scientific.net/msf.196-201.627
Itoh, Makoto, Ohno, Takahisa (2000) Relevance of surface reconstruction to specular RHEED intensity on GaAs(001) Physical Review B, 62 (11) 7219-7228 doi:10.1103/physrevb.62.7219
Taguchi, Akihito, Kageshima, Hiroyuki (1998) First-principles investigation of the oxygen negative-Ucenter in GaAs. Physical Review B, 57 (12) doi:10.1103/physrevb.57.r6779
Taguchi, Akihito, Kageshima, Hiroyuki (1999) Diffusion and stability of oxygen in GaAs and AlAs. Physical Review B, 60 (8) 5383-5391 doi:10.1103/physrevb.60.5383
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 8, 2026 11:47:32
Go to top of page