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Zhu, Xuejun, Fahy, S., Louie, Steven G. (1989) Ab initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle results. Physical Review B, 39 (11) 7840-7847 doi:10.1103/physrevb.39.7840

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Reference TypeJournal (article/letter/editorial)
TitleAb initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle results
JournalPhysical Review B
AuthorsZhu, XuejunAuthor
Fahy, S.Author
Louie, Steven G.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.7840Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101526Long-form Identifiermindat:1:5:14101526:4
GUID0
Full ReferenceZhu, Xuejun, Fahy, S., Louie, Steven G. (1989) Ab initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle results. Physical Review B, 39 (11) 7840-7847 doi:10.1103/physrevb.39.7840
Plain TextZhu, Xuejun, Fahy, S., Louie, Steven G. (1989) Ab initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle results. Physical Review B, 39 (11) 7840-7847 doi:10.1103/physrevb.39.7840
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

See Also

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Zhu, Xuejun, Fahy, S., Louie, Steven G. (1989) Erratum:Ab initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle results. Physical Review B, 40 (8) 5821 doi:10.1103/physrevb.40.5821
Fahy, S., Chang, K. J., Louie, Steven G., Cohen, Marvin L. (1987) Pressure coefficients of band gaps of diamond. Physical Review B, 35 (11) 5856-5859 doi:10.1103/physrevb.35.5856
Zhu, Xuejun, Louie, Steven G. (1991) Quasiparticle band structure of thirteen semiconductors and insulators. Physical Review B, 43 (17) 14142-14156 doi:10.1103/physrevb.43.14142
Zhu, Xuejun, Louie, Steven G. (1991) Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1. Physical Review B, 43 (14) 12146-12149 doi:10.1103/physrevb.43.12146
Chacham, Hélio, Zhu, Xuejun, Louie, Steven G. (1992) Pressure-induced insulator-metal transitions in solid xenon and hydrogen: A first-principles quasiparticle study. Physical Review B, 46 (11) 6688-6699 doi:10.1103/physrevb.46.6688
Hybertsen, Mark S., Louie, Steven G. (1986) Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies. Physical Review B, 34 (8) 5390-5413 doi:10.1103/physrevb.34.5390
Spataru, Catalin D., Benedict, Lorin X., Louie, Steven G. (2004) Ab initiocalculation of band-gap renormalization in highly excited GaAs. Physical Review B, 69 (20) doi:10.1103/physrevb.69.205204
Tiago, Murilo L., Northrup, John E., Louie, Steven G. (2003) Ab initiocalculation of the electronic and optical properties of solid pentacene. Physical Review B, 67 (11) doi:10.1103/physrevb.67.115212
Chacham, Hélio, Zhu, Xuejun, Louie, Steven G. (1993) Erratum: Pressure-induced insulator-metal transitions in solid xenon and hydrogen: A first-principles quasiparticle study. Physical Review B, 48 (3) 2025 doi:10.1103/physrevb.48.2025
Fahy, S., Louie, Steven G. (1987) High-pressure structural and electronic properties of carbon. Physical Review B, 36 (6) 3373-3385 doi:10.1103/physrevb.36.3373
Zhu, Xuejun, Zhang, S. B., Louie, Steven G., Cohen, Marvin L. (1989) Quasiparticle intepretation of photoemission spectra and optical properties of GaAs(110). Physical Review Letters, 63 (19). 2112-2115 doi:10.1103/physrevlett.63.2112
 
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