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Xu, F., Vos, M., Weaver, J. H. (1989) Influence of Au overlayers on valence-band offsets for buriedCaF2/Si(111) interfaces. Physical Review B, 39 (11) 8008-8011 doi:10.1103/physrevb.39.8008

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Au overlayers on valence-band offsets for buriedCaF2/Si(111) interfaces
JournalPhysical Review B
AuthorsXu, F.Author
Vos, M.Author
Weaver, J. H.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8008Search in ResearchGate
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Mindat Ref. ID14101555Long-form Identifiermindat:1:5:14101555:4
GUID0
Full ReferenceXu, F., Vos, M., Weaver, J. H. (1989) Influence of Au overlayers on valence-band offsets for buriedCaF2/Si(111) interfaces. Physical Review B, 39 (11) 8008-8011 doi:10.1103/physrevb.39.8008
Plain TextXu, F., Vos, M., Weaver, J. H. (1989) Influence of Au overlayers on valence-band offsets for buriedCaF2/Si(111) interfaces. Physical Review B, 39 (11) 8008-8011 doi:10.1103/physrevb.39.8008
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Anderson, Steven G., Xu, F., Vos, M., Weaver, J. H., Cheng, H. (1989) Schottky-barrier formation and atomic mixing at Au/ZnSe(100) and Co/ZnSe(100) interfaces with Co and Au interlayers. Physical Review B, 39 (8) 5079-5090 doi:10.1103/physrevb.39.5079
Vos, M., Anderson, Steven G., Weaver, J. H. (1989) Inelastic mean free paths for electrons at disordered interfaces. Physical Review B, 39 (5) 3274-3278 doi:10.1103/physrevb.39.3274
Xu, F., Vos, M., Sullivan, J. P., Atanasoska, Lj., Anderson, Steven G., Weaver, J. H., Cheng, H. (1988) Band-gap discontinuities for Ge/ZnSe(100) and Si/ZnSe(100): A photoemission study. Physical Review B, 38 (11) 7832-7835 doi:10.1103/physrevb.38.7832
Trafas, B. M., Vitomirov, I. M., Aldao, C. M., Gao, Y., Xu, F., Weaver, J. H., Partin, D. L. (1989) Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation. Physical Review B, 39 (5) 3265-3273 doi:10.1103/physrevb.39.3265
Colombo, L., Resta, R., Baroni, S. (1991) Valence-band offsets at strained Si/Ge interfaces. Physical Review B, 44 (11) 5572-5579 doi:10.1103/physrevb.44.5572
Xu, F., Vos, M., Weaver, J. H., Cheng, H. (1988) Interface dipoles, surface work functions, and Schottky-barrier formation at Au/ZnSe(100) interfaces. Physical Review B, 38 (18) 13418-13421 doi:10.1103/physrevb.38.13418
Vos, M., Xu, F., Anderson, Steven G., Weaver, J. H., Cheng, H. (1989) Photoemission studies of interface chemistry and Schottky barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al. Physical Review B, 39 (15) 10744-10752 doi:10.1103/physrevb.39.10744
Trafas, B. M., Xu, F., Vos, M., Aldao, C. M., Weaver, J. H. (1989) Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition. Physical Review B, 40 (6) 4022-4029 doi:10.1103/physrevb.40.4022
Fujimori, A., Grioni, M., Joyce, J. J., Weaver, J. H. (1987) Chemical bonding in ordered Ce overlayers on Si(111) Physical Review B, 36 (2) 1075-1079 doi:10.1103/physrevb.36.1075
Rorison, J. M. (1994) Theoretical model of excitons for type-II quantum-wire systems. Physical Review B, 50 (11) 8008-8011 doi:10.1103/physrevb.50.8008
Schwartz, G. P., Hybertsen, M. S., Bevk, J., Nuzzo, R. G., Mannaerts, J. P., Gualtieri, G. J. (1989) Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system. Physical Review B, 39 (2) 1235-1241 doi:10.1103/physrevb.39.1235
 
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