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Hirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T., Matsui, J. (1989) Microstructure and Schottky-barrier height of the Yb/GaAs interface. Physical Review B, 39 (11) 8037-8039 doi:10.1103/physrevb.39.8037

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Reference TypeJournal (article/letter/editorial)
TitleMicrostructure and Schottky-barrier height of the Yb/GaAs interface
JournalPhysical Review B
AuthorsHirose, K.Author
Akimoto, K.Author
Hirosawa, I.Author
Mizuki, J.Author
Mizutani, T.Author
Matsui, J.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8037Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101563Long-form Identifiermindat:1:5:14101563:9
GUID0
Full ReferenceHirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T., Matsui, J. (1989) Microstructure and Schottky-barrier height of the Yb/GaAs interface. Physical Review B, 39 (11) 8037-8039 doi:10.1103/physrevb.39.8037
Plain TextHirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T., Matsui, J. (1989) Microstructure and Schottky-barrier height of the Yb/GaAs interface. Physical Review B, 39 (11) 8037-8039 doi:10.1103/physrevb.39.8037
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Hirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T., Matsui, J. (1991) Relationship between interfacial superstructures and Schottky-barrier heights of Sb/GaAs contacts. Physical Review B, 43 (5) 4538-4540 doi:10.1103/physrevb.43.4538
Akimoto, K., Hirose, K., Mizuki, J. (1991) Structure at the Yb/GaAs interface studied by anomalous x-ray scattering. Physical Review B, 44 (4) 1622-1627 doi:10.1103/physrevb.44.1622
Tweet, D. J., Akimoto, K., Tatsumi, T., Hirosawa, I., Mizuki, J., Matsui, J. (1992) Direct observation of Ge and Si ordering at the Si/B/GexSi1−x(111) interface by anomalous x-ray diffraction. Physical Review Letters, 69 (15). 2236-2239 doi:10.1103/physrevlett.69.2236
Akimoto, K., Mizuki, J., Hirosawa, I., Matsui, J. (1989) MBE apparatus for in situ grazing incidence x‐ray diffraction. Review of Scientific Instruments, 60 (7). 2362-2364 doi:10.1063/1.1140772
Fujieda, S., Akimoto, K., Hirosawa, I., Mochizuki, Y., Mizuki, J., Matsumoto, Y., Matsui, J. (1990) Electrical properties and structures of the MOCVD-AIN/GaAs interface. Applied Surface Science, 41. 516-521 doi:10.1016/0169-4332(89)90113-x
Hirose, K., Tsuda, H., Mizutani, T. (1988) Al/n‐GaAs Schottky barrier height modified with rare‐earth metal interlayer. Journal of Applied Physics, 64 (11). 6575-6577 doi:10.1063/1.342032
Kikuchi, Akira (1989) Calculation of NiSi2-Si Schottky barrier height using an interface-defect model. Physical Review B, 40 (11) 8024-8025 doi:10.1103/physrevb.40.8024
Tanigaki, K., Hirosawa, I., Manako, T., Tsai, J. S., Mizuki, J., Ebbesen, T. W. (1994) Phase transitions inNa2AC60(A=Cs, Rb, and K) fullerides. Physical Review B, 49 (17) 12307-12310 doi:10.1103/physrevb.49.12307
Hirose, K., Tsuda, H., Mizutani, T. (1990) Control of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer. Applied Surface Science, 41. 174-178 doi:10.1016/0169-4332(89)90052-4
Akimoto, K., Mizuki, J., Hirosawa, I., Matsui, J. (1990) Interfacial superstructures studied by grazing incidence x-ray diffraction. Applied Surface Science, 41. 317-322 doi:10.1016/0169-4332(89)90078-0
Mizuki, J., Takai, M., Takahashi, H., MĂ´ri, N., Tanigaki, K., Hirosawa, I., Prassides, K. (1994) Pressure dependence of superconductivity in simple-cubicNa2CsC60. Physical Review B, 50 (5) 3466-3469 doi:10.1103/physrevb.50.3466
 
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