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Bongiovanni, G., Staehli, J. L. (1989) Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width. Physical Review B, 39 (12) 8359-8363 doi:10.1103/physrevb.39.8359

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Reference TypeJournal (article/letter/editorial)
TitleProperties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width
JournalPhysical Review B
AuthorsBongiovanni, G.Author
Staehli, J. L.Author
Year1989 (April 15)Volume39
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8359Search in ResearchGate
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Mindat Ref. ID14101608Long-form Identifiermindat:1:5:14101608:7
GUID0
Full ReferenceBongiovanni, G., Staehli, J. L. (1989) Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width. Physical Review B, 39 (12) 8359-8363 doi:10.1103/physrevb.39.8359
Plain TextBongiovanni, G., Staehli, J. L. (1989) Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width. Physical Review B, 39 (12) 8359-8363 doi:10.1103/physrevb.39.8359
In(1989, April) Physical Review B Vol. 39 (12) American Physical Society (APS)

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Bongiovanni, G., Staehli, J. L. (1992) Electron–Hole Plasma Decay Time in GaAs/(Ga, Al)As Quantum Wells. physica status solidi (b), 173 (1). 365-371 doi:10.1002/pssb.2221730136
Bongiovanni, G., Staehli, J. L. (1992) Density dependence of the electron-hole plasma lifetime in semiconductor quantum wells. Physical Review B, 46 (15) 9861-9864 doi:10.1103/physrevb.46.9861
Bongiovanni, G., Staehli, J. L., Martin, D. (1988) Many-Body Effects in the Electron–Hole Plasma Confined in GaAs–(GaAl) As Quantum Wells. physica status solidi (b), 150 (2). 685-690 doi:10.1002/pssb.2221500254
Duggan, G. (1988) Theory of heavy-hole magnetoexcitons in GaAs-(Al,Ga)As quantum-well heterostructures. Physical Review B, 37 (5) 2759-2762 doi:10.1103/physrevb.37.2759
Tsen, K. T., Sankey, O. F., Halama, G., Tsen, Shu-Chen Y., Morkoc, H. (1989) Transport of the photoexcited electron-hole plasma in GaAs quantum wells. Physical Review B, 39 (9) 6276-6278 doi:10.1103/physrevb.39.6276
Cui, H. L., Horing, N. J. M. (1989) Magnetotransport of an electron-hole plasma in a GaAs quantum well. Physical Review B, 40 (5) 2901-2907 doi:10.1103/physrevb.40.2901
Gopal, A., Vengurlekar, A. (2000) Well-width dependence of light-hole exciton dephasing in GaAs quantum wells. Physical Review B, 62 (7) 4624-4629 doi:10.1103/physrevb.62.4624
Schreiber, L., Duda, D., Beschoten, B., Güntherodt, G., Schönherr, H.-P., Herfort, J. (2007) Anisotropic electron spin lifetime in(In,Ga)As∕GaAs(110) quantum wells. Physical Review B, 75 (19) doi:10.1103/physrevb.75.193304
Oliveira, L. E., Mahan, G. D. (1993) Donor-photoluminescence line shapes from GaAs-(Ga,Al)As quantum wells. Physical Review B, 47 (4) 2406-2409 doi:10.1103/physrevb.47.2406
Syperek, M., Andrzejewski, J., Rudno-Rudziński, W., Sęk, G., Misiewicz, J., Pavelescu, E. M., Gilfert, C., Reithmaier, J. P. (2012) Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system. Physical Review B, 85 (12) doi:10.1103/physrevb.85.125311
Koinov, Zlatko G. (2008) Variational method for solving the Bethe-Salpeter equation for excitons in GaAs-(Ga,Al)As quantum wells in perpendicular magnetic fields. Physical Review B, 77 (16) doi:10.1103/physrevb.77.165333
 
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