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Hara, K., Ikeda, M., Ohtsuki, O., Terakura, K., Mikami, M., Tago, Y., Oguchi, T. (1989) Molecular-dynamics simulations for molecular-beam epitaxy: Overlayer growth pattern in two-component Lennard-Jones systems. Physical Review B, 39 (13) 9476-9485 doi:10.1103/physrevb.39.9476

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Reference TypeJournal (article/letter/editorial)
TitleMolecular-dynamics simulations for molecular-beam epitaxy: Overlayer growth pattern in two-component Lennard-Jones systems
JournalPhysical Review B
AuthorsHara, K.Author
Ikeda, M.Author
Ohtsuki, O.Author
Terakura, K.Author
Mikami, M.Author
Tago, Y.Author
Oguchi, T.Author
Year1989 (May 1)Volume39
Issue13
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.9476Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101745Long-form Identifiermindat:1:5:14101745:9
GUID0
Full ReferenceHara, K., Ikeda, M., Ohtsuki, O., Terakura, K., Mikami, M., Tago, Y., Oguchi, T. (1989) Molecular-dynamics simulations for molecular-beam epitaxy: Overlayer growth pattern in two-component Lennard-Jones systems. Physical Review B, 39 (13) 9476-9485 doi:10.1103/physrevb.39.9476
Plain TextHara, K., Ikeda, M., Ohtsuki, O., Terakura, K., Mikami, M., Tago, Y., Oguchi, T. (1989) Molecular-dynamics simulations for molecular-beam epitaxy: Overlayer growth pattern in two-component Lennard-Jones systems. Physical Review B, 39 (13) 9476-9485 doi:10.1103/physrevb.39.9476
In(1989, May) Physical Review B Vol. 39 (13) American Physical Society (APS)

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Ikeda, M., Terakura, K., Oguchi, T. (1993) Theoretical study on the electronic structure of (Si)m/(Ge)nsuperlattices. Physical Review B, 48 (3) 1571-1582 doi:10.1103/physrevb.48.1571
Zhang, Z., Orr, B. G. (2003) Two-component simulation for molecular beam epitaxy growth of GaAs. Physical Review B, 67 (7) doi:10.1103/physrevb.67.075305
Zuo, J.-K., Wang, G.-C., Lu, T.-M. (1989) Dynamical scaling in the domain growth of a chemisorbed overlayer: W(112)(2×1)-O. Physical Review B, 39 (13) 9432-9436 doi:10.1103/physrevb.39.9432
Paik, S. M., Das Sarma, S. (1989) Atomistic growth mechanisms for the molecular-beam epitaxy of a model system. Physical Review B, 39 (14) 9793-9796 doi:10.1103/physrevb.39.9793
Ohtsuki, T., Ohno, K., Shiga, K., Kawazoe, Y., Maruyama, Y., Shikano, K., Masumoto, K. (2001) Formation of Sb- and Te-doped fullerenes by using nuclear recoil and molecular-dynamics simulations. Physical Review B, 64 (12) doi:10.1103/physrevb.64.125402
Ikeda, M., Terakura, K., Oguchi, T. (1992) Alternating change of allowed and forbidden optical transitions in (Si)2m/(Ge)10−2msuperlattices with (001) stacking. Physical Review B, 45 (3) 1496-1499 doi:10.1103/physrevb.45.1496
Motooka, T., Nisihira, K., Munetoh, S., Moriguchi, K., Shintani, A. (2000) Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms. Physical Review B, 61 (12) 8537-8540 doi:10.1103/physrevb.61.8537
Ramirez, R., Schneider, M., Schuller, Ivan K. (1989) Peripheral roughening in a monolayer: A molecular-dynamics study. Physical Review B, 39 (13) 9646-9649 doi:10.1103/physrevb.39.9646
Massobrio, C., Pontikis, V., Ciccotti, G. (1989) Diffusion in the Lennard-Jones glass model studied by equilibrium and nonequilibrium molecular dynamics. Physical Review B, 39 (4) 2640-2653 doi:10.1103/physrevb.39.2640
Wu, P. K., Tringides, M. C., Lagally, M. G. (1989) Ordering kinetics of a chemisorbed overlayer: O/W(110) Physical Review B, 39 (11) 7595-7610 doi:10.1103/physrevb.39.7595
Wang, C. Z., Chan, C. T., Ho, K. M. (1989) Empirical tight-binding force model for molecular-dynamics simulation of Si. Physical Review B, 39 (12) 8586-8592 doi:10.1103/physrevb.39.8586
 
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