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Lippens, P. E., Lannoo, M. (1989) Calculation of the band gap for small CdS and ZnS crystallites. Physical Review B, 39 (15) 10935-10942 doi:10.1103/physrevb.39.10935

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Reference TypeJournal (article/letter/editorial)
TitleCalculation of the band gap for small CdS and ZnS crystallites
JournalPhysical Review B
AuthorsLippens, P. E.Author
Lannoo, M.Author
Year1989 (May 15)Volume39
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.10935Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101971Long-form Identifiermindat:1:5:14101971:2
GUID0
Full ReferenceLippens, P. E., Lannoo, M. (1989) Calculation of the band gap for small CdS and ZnS crystallites. Physical Review B, 39 (15) 10935-10942 doi:10.1103/physrevb.39.10935
Plain TextLippens, P. E., Lannoo, M. (1989) Calculation of the band gap for small CdS and ZnS crystallites. Physical Review B, 39 (15) 10935-10942 doi:10.1103/physrevb.39.10935
In(1989, May) Physical Review B Vol. 39 (15) American Physical Society (APS)

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Lippens, P. E., Lannoo, M. (1990) Comparison between calculated and experimental values of the lowest excited electronic state of small CdSe crystallites. Physical Review B, 41 (9) 6079-6081 doi:10.1103/physrevb.41.6079
Lefebvre, I., Lippens, P. E., Lannoo, M., Allan, G. (1990) Band structure ofCsSnBr3. Physical Review B, 42 (14) 9174-9177 doi:10.1103/physrevb.42.9174
Walter, J. P., Cohen, M. L. (1970) Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnS. Physical Review B, 1 (2) 942 doi:10.1103/physrevb.1.942.7
Norman, M. R. (1989) Band theory and the insulating gap in CoO. Physical Review B, 40 (15) 10632-10634 doi:10.1103/physrevb.40.10632
Behboudnia, M., Sen, P. (2001) Systematics in the nanoparticle band gap of ZnS andZn1−xMxS(M=Mn,Fe, Ni) for various dopant concentrations. Physical Review B, 63 (3) doi:10.1103/physrevb.63.035316
Allan, G., Delerue, C., Lannoo, M., Martin, E. (1995) Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites. Physical Review B, 52 (16) 11982-11988 doi:10.1103/physrevb.52.11982
Goi, A. R., Syassen, K., Cardona, M. (1989) Direct-band-gap absorption in germanium under pressure. Physical Review B, 39 (17) 12921-12924 doi:10.1103/physrevb.39.12921
Lefebvre, I., Lannoo, M., Allan, G. (1989) Tight-binding prediction of tetrahedral semiconductor ionization potentials. Physical Review B, 39 (18) 13518-13520 doi:10.1103/physrevb.39.13518
Lannoo, M., Bensoussan, M. (1977) Bonds and band structure inGexSe1−xcompounds. Physical Review B, 16 (8) 3546-3555 doi:10.1103/physrevb.16.3546
Lippens, P. E., Lannoo, M., Pouliquen, J. F. (1989) Calculation of the transverse acoustoelectric voltage in a piezoelectric‐extrinsic semiconductor structure. Journal of Applied Physics, 66 (3). 1209-1216 doi:10.1063/1.343465
de Andres, P. L., Echenique, P. M., Flores, F. (1989) Calculation of the lifetimes for intermediate Rydberg states. Physical Review B, 39 (14) 10356-10358 doi:10.1103/physrevb.39.10356
 
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