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Krause-Rehberg, R., Leipner, H. S., Kupsch, A., Polity, A., Drost, Th. (1994) Positron study of defects in as-grown and plastically deformed GaAs:Te. Physical Review B, 49 (4) 2385-2395 doi:10.1103/physrevb.49.2385

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Reference TypeJournal (article/letter/editorial)
TitlePositron study of defects in as-grown and plastically deformed GaAs:Te
JournalPhysical Review B
AuthorsKrause-Rehberg, R.Author
Leipner, H. S.Author
Kupsch, A.Author
Polity, A.Author
Drost, Th.Author
Year1994 (January 15)Volume49
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.49.2385Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14123772Long-form Identifiermindat:1:5:14123772:7
GUID0
Full ReferenceKrause-Rehberg, R., Leipner, H. S., Kupsch, A., Polity, A., Drost, Th. (1994) Positron study of defects in as-grown and plastically deformed GaAs:Te. Physical Review B, 49 (4) 2385-2395 doi:10.1103/physrevb.49.2385
Plain TextKrause-Rehberg, R., Leipner, H. S., Kupsch, A., Polity, A., Drost, Th. (1994) Positron study of defects in as-grown and plastically deformed GaAs:Te. Physical Review B, 49 (4) 2385-2395 doi:10.1103/physrevb.49.2385
In(1994, January) Physical Review B Vol. 49 (4) American Physical Society (APS)

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Krause-Rehberg, R., Brohl, M., Leipner, H. S., Drost, Th., Polity, A., Beyer, U., Alexander, H. (1993) Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium. Physical Review B, 47 (20) 13266-13276 doi:10.1103/physrevb.47.13266
Leipner, H. S., Krause-Rehberg, R., Kupsch, A., Drost, T., Polity, A. (1993) Electron microscopy and positron investigations of plastically deformed GaAs. physica status solidi (a), 138 (2). 489-495 doi:10.1002/pssa.2211380217
Krause, R., Beyer, Uwe, Drost, Th., Polity, A., Leipner, H.S., Brohl, M., Alexander, H. (1992) Study of Deformed Si and Ge by Positron Lifetime Measurements. Materials Science Forum, 105. 1101-1104 doi:10.4028/www.scientific.net/msf.105-110.1101
Leipner, H.S., Krause-Rehberg, Reinhard, Polity, A., Drost, Th., Alexander, H. (1993) Relation between Dislocation Motion and Formation of Intrinsic Point Defects. Materials Science Forum, 143. 1589-1594 doi:10.4028/www.scientific.net/msf.143-147.1589
Krause-Rehberg, R., Drost, Th., Polity, A., Roos, G., Pensl, G., Volm, D., Meyer, B. K., Bischopink, G., Benz, K. W. (1993) Evidence for a vacancy-related ground state of theDXcenter inAlxGa1−xSb: A positron-annihilation study. Physical Review B, 48 (16) 11723-11725 doi:10.1103/physrevb.48.11723
Polity, A., Börner, F., Huth, S., Eichler, S., Krause-Rehberg, R. (1998) Defects in electron-irradiated Si studied by positron-lifetime spectroscopy. Physical Review B, 58 (16) 10363-10377 doi:10.1103/physrevb.58.10363
Krause-Rehberg, Reinhard, Drost, Th., Polity, A. (1993) Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation. Materials Science Forum, 143. 429-434 doi:10.4028/www.scientific.net/msf.143-147.429
Polity, A., Rudolf, F., Nagel, C., Eichler, S., Krause-Rehberg, R. (1997) Defects in electron-irradiated GaAs studied by positron lifetime spectroscopy. Physical Review B, 55 (16) 10467-10479 doi:10.1103/physrevb.55.10467
Eichler, S., Gebauer, J., Börner, F., Polity, A., Krause-Rehberg, R., Wendler, E., Weber, B., Wesch, W., Börner, H. (1997) Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy. Physical Review B, 56 (3) 1393-1403 doi:10.1103/physrevb.56.1393
Leipner, H. S., Wang, Z., Gu, H., Mikhnovich, V. V., Bondarenko, V., Krause-Rehberg, R., Demenet, J.-L., Rabier, J. (2004) Defects in silicon plastically deformed at room temperature. physica status solidi (a), 201 (9). 2021-2028 doi:10.1002/pssa.200306819
Leipner, H. S., Wang, Z., Gu, H., Mikhnovich, V. V., Bondarenko, V., Krause-Rehberg, R., Demenet, J.-L., Rabier, J. (2004) Defects in silicon plastically deformed at room temperature. physica status solidi (a), 201 (9). 2001 doi:10.1002/pssa.200490014
 
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