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Schumm, Gerhard (1994) Chemical equilibrium description of stable and metastable defect structures ina-Si:H. Physical Review B, 49 (4) 2427-2442 doi:10.1103/physrevb.49.2427

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Reference TypeJournal (article/letter/editorial)
TitleChemical equilibrium description of stable and metastable defect structures ina-Si:H
JournalPhysical Review B
AuthorsSchumm, GerhardAuthor
Year1994 (January 15)Volume49
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.49.2427Search in ResearchGate
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Mindat Ref. ID14123776Long-form Identifiermindat:1:5:14123776:5
GUID0
Full ReferenceSchumm, Gerhard (1994) Chemical equilibrium description of stable and metastable defect structures ina-Si:H. Physical Review B, 49 (4) 2427-2442 doi:10.1103/physrevb.49.2427
Plain TextSchumm, Gerhard (1994) Chemical equilibrium description of stable and metastable defect structures ina-Si:H. Physical Review B, 49 (4) 2427-2442 doi:10.1103/physrevb.49.2427
In(1994, January) Physical Review B Vol. 49 (4) American Physical Society (APS)

See Also

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Schumm, G., Jackson, W. B., Street, R. A. (1993) Nonequilibrium occupancy of tail states and defects ina-Si:H: Implications for defect structure. Physical Review B, 48 (19) 14198-14207 doi:10.1103/physrevb.48.14198
Winer, K. (1990) Defect formation ina-Si:H. Physical Review B, 41 (17) 12150-12161 doi:10.1103/physrevb.41.12150
Schumm, G., Bauer, G. H. (1989) Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents. Physical Review B, 39 (8) 5311-5326 doi:10.1103/physrevb.39.5311
Street, R. A. (1980) Recombination ina−Si:H: Defect luminescence. Physical Review B, 21 (12) 5775-5784 doi:10.1103/physrevb.21.5775
Winer, K. (1989) Chemical-equilibrium description of the gap-state distribution ina-Si:H. Physical Review Letters, 63 (14). 1487-1490 doi:10.1103/physrevlett.63.1487
Li, Qiming, Biswas, R. (1995) Hydrogen rebonding and defect formation ina-Si:H. Physical Review B, 52 (15) 10705-10708 doi:10.1103/physrevb.52.10705
Kounavis, P. (2002) Various defect states ina-Si:H studied by modulated photoconductivity spectroscopy. Physical Review B, 65 (15) doi:10.1103/physrevb.65.155207
Skumanich, Andrew, Amer, Nabil M., Jackson, Warren B. (1985) Effects of dopants and defects on light-induced metastable states ina-Si:H. Physical Review B, 31 (4) 2263-2269 doi:10.1103/physrevb.31.2263
Wu, Y., Stesmans, A. (1988) Evidence ofg=2.013 defect centers ina-Si:H. Physical Review B, 37 (10) 4886-4892 doi:10.1103/physrevb.37.4886
Park, Young K., Myles, Charles W. (1995) Molecular-dynamics study of defect formation ina-Si:H. Physical Review B, 51 (3) 1671-1679 doi:10.1103/physrevb.51.1671
Agarwal, S. C., Guha, S. (1985) Persistent photoconductivity ina−Si:H/a−SiNx:Hlayered structures. Physical Review B, 31 (8) 5547-5550 doi:10.1103/physrevb.31.5547
 
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