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Cheng, Ying, Stavola, Michael, Abernathy, C. R., Pearton, S. J., Hobson, W. S. (1994) Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. Physical Review B, 49 (4) 2469-2476 doi:10.1103/physrevb.49.2469

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Reference TypeJournal (article/letter/editorial)
TitleAligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers
JournalPhysical Review B
AuthorsCheng, YingAuthor
Stavola, MichaelAuthor
Abernathy, C. R.Author
Pearton, S. J.Author
Hobson, W. S.Author
Year1994 (January 15)Volume49
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.49.2469Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14123780Long-form Identifiermindat:1:5:14123780:2
GUID0
Full ReferenceCheng, Ying, Stavola, Michael, Abernathy, C. R., Pearton, S. J., Hobson, W. S. (1994) Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. Physical Review B, 49 (4) 2469-2476 doi:10.1103/physrevb.49.2469
Plain TextCheng, Ying, Stavola, Michael, Abernathy, C. R., Pearton, S. J., Hobson, W. S. (1994) Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. Physical Review B, 49 (4) 2469-2476 doi:10.1103/physrevb.49.2469
In(1994, January) Physical Review B Vol. 49 (4) American Physical Society (APS)

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Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Hobson, W. S. (1993) Passivation of carbonā€doped GaAs layers by hydrogen introduced by annealing and growth ambients. Journal of Applied Physics, 73 (8). 3716-3724 doi:10.1063/1.352902
Stavola, Michael, Pearton, S. J., Lopata, J., Abernathy, C. R., Bergman, K. (1989) Structure and dynamics of the Be-H complex in GaAs. Physical Review B, 39 (11) 8051-8054 doi:10.1103/physrevb.39.8051
Veloarisoa, I. A., Stavola, Michael, Cheng, Y. M., Uftring, S., Watkins, G. D., Pearton, S. J., Abernathy, C. R., Lopata, J. (1993) Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress. Physical Review B, 47 (24) 16237-16241 doi:10.1103/physrevb.47.16237
Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbonā€doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
Kozuch, D. M., Stavola, Michael, Spector, S. J., Pearton, S. J., Lopata, J. (1993) Symmetry, stress alignment, and reorientation kinetics of theSiAs-H complex in GaAs. Physical Review B, 48 (12) 8751-8756 doi:10.1103/physrevb.48.8751
Stavola, Michael, Bergman, K., Pearton, S. J., Lopata, J. (1988) Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon. Physical Review Letters, 61 (24). 2786-2789 doi:10.1103/physrevlett.61.2786
Bergman, K., Stavola, Michael, Pearton, S. J., Lopata, J. (1988) Donor-hydrogen complexes in passivated silicon. Physical Review B, 37 (5) 2770-2773 doi:10.1103/physrevb.37.2770
Pearton, S. J., Dautremont-Smith, W. C., Lopata, J., Tu, C. W., Abernathy, C. R. (1987) Dopant-type effects on the diffusion of deuterium in GaAs. Physical Review B, 36 (8) 4260-4264 doi:10.1103/physrevb.36.4260
Stavola, Michael, Pearton, S. J., Lopata, J., Dautremont-Smith, W. C. (1988) Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations. Physical Review B, 37 (14) 8313-8318 doi:10.1103/physrevb.37.8313
Dautremontā€Smith, W. C., Nabity, J. C., Swaminathan, V., Stavola, Michael, Chevallier, J., Tu, C. W., Pearton, S. J. (1986) Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure. Applied Physics Letters, 49 (17). 1098-1100 doi:10.1063/1.97433
Shi, G. Alvin, Stavola, Michael, Pearton, S. J., Thieme, M., Lavrov, E. V., Weber, J. (2005) Hydrogen local modes and shallow donors in ZnO. Physical Review B, 72 (19) doi:10.1103/physrevb.72.195211
 
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