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Olajos, Janos, Jia, Ying-Bo, Engvall, Jesper, Grimmeiss, Hermann G., Kasper, Erich, Kibbel, Horst, Presting, Hartmut (1994) Effect of hydrostatic pressure on the band-gap luminescence of strain-adjustedSimGensuperlattices. Physical Review B, 49 (4) 2615-2621 doi:10.1103/physrevb.49.2615

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Reference TypeJournal (article/letter/editorial)
TitleEffect of hydrostatic pressure on the band-gap luminescence of strain-adjustedSimGensuperlattices
JournalPhysical Review B
AuthorsOlajos, JanosAuthor
Jia, Ying-BoAuthor
Engvall, JesperAuthor
Grimmeiss, Hermann G.Author
Kasper, ErichAuthor
Kibbel, HorstAuthor
Presting, HartmutAuthor
Year1994 (January 15)Volume49
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.49.2615Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14123794Long-form Identifiermindat:1:5:14123794:9
GUID0
Full ReferenceOlajos, Janos, Jia, Ying-Bo, Engvall, Jesper, Grimmeiss, Hermann G., Kasper, Erich, Kibbel, Horst, Presting, Hartmut (1994) Effect of hydrostatic pressure on the band-gap luminescence of strain-adjustedSimGensuperlattices. Physical Review B, 49 (4) 2615-2621 doi:10.1103/physrevb.49.2615
Plain TextOlajos, Janos, Jia, Ying-Bo, Engvall, Jesper, Grimmeiss, Hermann G., Kasper, Erich, Kibbel, Horst, Presting, Hartmut (1994) Effect of hydrostatic pressure on the band-gap luminescence of strain-adjustedSimGensuperlattices. Physical Review B, 49 (4) 2615-2621 doi:10.1103/physrevb.49.2615
In(1994, January) Physical Review B Vol. 49 (4) American Physical Society (APS)

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Olajos, Janos, Engvall, Jesper, Grimmeiss, Hermann G., Menczigar, Ulrich, Abstreiter, Gerhard, Kibbel, Horst, Kasper, Erich, Presting, Hartmut (1992) Band gap of strain-symmetrized, short-period Si/Ge superlattices. Physical Review B, 46 (19) 12857-12860 doi:10.1103/physrevb.46.12857
Olajos, Janos, Engvall, Jesper, Grimmeiss, Hermann G., Jia, Ying-Bo, Menzcigar, Ulrich, Kasper, Erich, Kibbel, Horst, Presting, Hartmut (1994) Interband Photo- and Electroluminescence from Short-Period Si/Ge Superlattices. Japanese Journal of Applied Physics, 33. 2335-2339 doi:10.1143/jjap.33.2335
Engvall, Jesper, Olajos, Janos, Grimmeiss, Hermann G., Kibbel, Horst, Presting, Hartmut (1995) Luminescence from monolayer-thick Ge quantum wells embedded in Si. Physical Review B, 51 (3) 2001-2004 doi:10.1103/physrevb.51.2001
Engvall, Jesper, Olajos, Janos, Grimmeiss, Hermann G., Presting, Hartmut, Kibbel, Horst, Kasper, Erich (1993) Electroluminescence at room temperature of a SinGemstrained‐layer superlattice. Applied Physics Letters, 63 (4). 491-493 doi:10.1063/1.110780
Olajos, Janos, Engvall, Jesper, Grimmeiss, Hermann G., Gail, Marcus, Abstreiter, Gerhard, Presting, Hartmut, Kibbel, Horst (1996) Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells. Physical Review B, 54 (3) 1922-1927 doi:10.1103/physrevb.54.1922
Engvall, Jesper, Olajos, Janos, Grimmeiss, Hermann G., Presting, Hartmut, Kibbel, Horst (1996) Optical anisotropy of SiGe superlattices. Journal of Applied Physics, 80 (7). 4012-4018 doi:10.1063/1.363360
Olajos, Janos, Engvall, Jesper, Grimmeiss, Hermann G., Kibbel, Horst, Presting, Hartmut (1996) Optical anisotropies in strained Si/SiGe systems. Applied Surface Science, 102. 283-287 doi:10.1016/0169-4332(96)00065-7
Menczigar, U., Abstreiter, G., Olajos, J., Grimmeiss, H., Kibbel, H., Presting, H., Kasper, E. (1993) Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices. Physical Review B, 47 (7) 4099-4102 doi:10.1103/physrevb.47.4099
Gail, M., Abstreiter, G., Olajos, J., Engvall, J., Grimmeiss, H., Kibbel, H., Presting, H. (1995) Room‐temperature photoluminescence of GemSinGem structures. Applied Physics Letters, 66 (22). 2978-2980 doi:10.1063/1.114249
Grimmeiss, H. G., Nagesh, V., Presting, H., Kibbel, H., Kasper, E. (1992) Optical studies of short-period Si/Ge superlattices by photocapacitance. Physical Review B, 45 (3) 1236-1239 doi:10.1103/physrevb.45.1236
Olajos, Janos, Kleverman, Mats, Grimmeiss, Hermann G. (1989) 8000-cm−1line spectrum in platinum-doped silicon studied by perturbation spectroscopy. Physical Review B, 40 (9) 6196-6209 doi:10.1103/physrevb.40.6196
 
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