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Horn-von Hoegen, M., Al Falou, A., Müller, B. H., Köhler, U., Andersohn, L., Dahlheimer, B., Henzler, M. (1994) Surfactant-stabilized strained Ge cones on Si(001) Physical Review B, 49 (4) 2637-2650 doi:10.1103/physrevb.49.2637

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Reference TypeJournal (article/letter/editorial)
TitleSurfactant-stabilized strained Ge cones on Si(001)
JournalPhysical Review B
AuthorsHorn-von Hoegen, M.Author
Al Falou, A.Author
Müller, B. H.Author
Köhler, U.Author
Andersohn, L.Author
Dahlheimer, B.Author
Henzler, M.Author
Year1994 (January 15)Volume49
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.49.2637Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14123797Long-form Identifiermindat:1:5:14123797:0
GUID0
Full ReferenceHorn-von Hoegen, M., Al Falou, A., Müller, B. H., Köhler, U., Andersohn, L., Dahlheimer, B., Henzler, M. (1994) Surfactant-stabilized strained Ge cones on Si(001) Physical Review B, 49 (4) 2637-2650 doi:10.1103/physrevb.49.2637
Plain TextHorn-von Hoegen, M., Al Falou, A., Müller, B. H., Köhler, U., Andersohn, L., Dahlheimer, B., Henzler, M. (1994) Surfactant-stabilized strained Ge cones on Si(001) Physical Review B, 49 (4) 2637-2650 doi:10.1103/physrevb.49.2637
In(1994, January) Physical Review B Vol. 49 (4) American Physical Society (APS)

See Also

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Horn-von Hoegen, M., Müller, B. H., Al-Falou, A. (1994) Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001) Physical Review B, 50 (16) 11640-11652 doi:10.1103/physrevb.50.11640
Horn-von Hoegen, M., Müller, B. H., Al-Falou, A., Henzler, M. (1993) Surfactant induced reversible changes of surface morphology. Physical Review Letters, 71 (19). 3170-3173 doi:10.1103/physrevlett.71.3170
Horn-von Hoegen, M., Copel, M., Tsang, J. C., Reuter, M. C., Tromp, R. M. (1994) Surfactant-mediated growth of Ge on Si(111) Physical Review B, 50 (15) 10811-10822 doi:10.1103/physrevb.50.10811
Falta, J., Gog, T., Materlik, G., Müller, B. H., Horn-von Hoegen, M. (1995) Interface roughening of Ge δ layers on Si(111) Physical Review B, 51 (12) 7598-7602 doi:10.1103/physrevb.51.7598
Fölsch, S., Meyer, G., Winau, D., Rieder, K. H., Horn-von Hoegen, M., Schmidt, T., Henzler, M. (1995) Reconstruction-dependent orientation of Ag(111) films on Si(001) Physical Review B, 52 (19) 13745-13748 doi:10.1103/physrevb.52.13745
Horn-von Hoegen, M., Müller, B. H., Grabosch, T., Kury, P. (2004) Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235313
Copel, M., Reuter, M. C., Horn von Hoegen, M., Tromp, R. M. (1990) Influence of surfactants in Ge and Si epitaxy on Si(001) Physical Review B, 42 (18) 11682-11689 doi:10.1103/physrevb.42.11682
Hoegen, M.Horn-von, Pook, M., Al Falou, A., Müller, B.H., Henzler, M. (1993) The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111). Surface Science Letters, 284 (1). doi:10.1016/0167-2584(93)90973-m
Hoegen, M.Horn-von, Al-Falou, A., Pietsch, H., Müller, B.H., Henzler, M. (1993) Formation of interfacial dislocation network in surfactant mediated growth of Ge on Si(111) investigated by Spa-Leed. Surface Science, 298 (1). 29-42 doi:10.1016/0039-6028(93)90077-w
Jnawali, G., Hattab, H., Krenzer, B., Horn von Hoegen, M. (2006) Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM. Physical Review B, 74 (19) doi:10.1103/physrevb.74.195340
Horn-von Hoegen, M., Henzler, M. (1994) Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111). physica status solidi (a), 146 (1). 337-352 doi:10.1002/pssa.2211460129
 
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