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Furukawa, Tomoki; Kasuya, Naotaka; Takayanagi, Hideaki; Watanabe, Shun; Takeya, Jun (2025) Hall mobility exceeding 100 cm 2  V −1  s −1 observed in strained organic semiconductors. Science Advances, 11 (40). doi:10.1126/sciadv.aea1634

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Reference TypeJournal (article/letter/editorial)
TitleHall mobility exceeding 100 cm 2  V −1  s −1 observed in strained organic semiconductors
JournalScience Advances
AuthorsFurukawa, TomokiAuthor
Kasuya, NaotakaAuthor
Takayanagi, HideakiAuthor
Watanabe, ShunAuthor
Takeya, JunAuthor
Year2025 (October 3)Volume11
Issue40
PublisherAmerican Association for the Advancement of Science (AAAS)
DOIdoi:10.1126/sciadv.aea1634Search in ResearchGate
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Mindat Ref. ID19020122Long-form Identifiermindat:1:5:19020122:9
GUID0
Full ReferenceFurukawa, Tomoki; Kasuya, Naotaka; Takayanagi, Hideaki; Watanabe, Shun; Takeya, Jun (2025) Hall mobility exceeding 100 cm 2  V −1  s −1 observed in strained organic semiconductors. Science Advances, 11 (40). doi:10.1126/sciadv.aea1634
Plain TextFurukawa, Tomoki; Kasuya, Naotaka; Takayanagi, Hideaki; Watanabe, Shun; Takeya, Jun (2025) Hall mobility exceeding 100 cm 2  V −1  s −1 observed in strained organic semiconductors. Science Advances, 11 (40). doi:10.1126/sciadv.aea1634
In(2025, October) Science Advances Vol. 11 (40). American Association for the Advancement of Science (AAAS)

References Listed

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S. M. Sze Y. Li K. K. Ng Physics of Semiconductor Devices (John Wiley & Sons 2021).
K. Seeger Semiconductor Physics (Springer Science & Business Media 2013).
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