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Inada, Tomoki, Otoki, Yohei, Ohata, Katsumi, Taharasako, Shuichi, Kuma, Shoji (1989) Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs. Journal of Crystal Growth, 96 (2). 327-332 doi:10.1016/0022-0248(89)90529-0

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Reference TypeJournal (article/letter/editorial)
TitleEffects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs
JournalJournal of Crystal Growth
AuthorsInada, TomokiAuthor
Otoki, YoheiAuthor
Ohata, KatsumiAuthor
Taharasako, ShuichiAuthor
Kuma, ShojiAuthor
Year1989 (June)Volume96
Issue2
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(89)90529-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2787134Long-form Identifiermindat:1:5:2787134:8
GUID0
Full ReferenceInada, Tomoki, Otoki, Yohei, Ohata, Katsumi, Taharasako, Shuichi, Kuma, Shoji (1989) Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs. Journal of Crystal Growth, 96 (2). 327-332 doi:10.1016/0022-0248(89)90529-0
Plain TextInada, Tomoki, Otoki, Yohei, Ohata, Katsumi, Taharasako, Shuichi, Kuma, Shoji (1989) Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs. Journal of Crystal Growth, 96 (2). 327-332 doi:10.1016/0022-0248(89)90529-0
In(1989, June) Journal of Crystal Growth Vol. 96 (2) Elsevier BV

See Also

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Otoki, Yoohei, Watanabe, Masatoshi, Inada, Tomoki, Kuma, Shoji (1990) Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomography. Journal of Crystal Growth, 103 (1). 85-90 doi:10.1016/0022-0248(90)90174-j
Shibata, Masatomo, Suzuki, Takashi, Kuma, Shoji, Inada, Tomoki (1993) LEC growth of large GaAs single crystals. Journal of Crystal Growth, 128 (1). 439-443 doi:10.1016/0022-0248(93)90363-2
Inada, Tomoki, Otoki, Yoohei, Kuma, Shoji (1990) Quasi-quantitative estimation of solidus curve on As-rich side of Ga-As system. Journal of Crystal Growth, 102 (4). 915-918 doi:10.1016/0022-0248(90)90860-n
Nishio, Johji, Terashima, Kazutaka (1989) Influence of melt preparation on residual impurity concentration in semi-insulating LEC GaAs. Journal of Crystal Growth, 96 (3). 605-608 doi:10.1016/0022-0248(89)90058-4
Shibata, Masatomo, Sasaki, Yukio, Inada, Tomoki, Kuma, Shoji (1990) Observation of edge-facets in 〈100〉 InP crystals grown by LEC method. Journal of Crystal Growth, 102 (3). 557-561 doi:10.1016/0022-0248(90)90413-f
Fujii, Takashi, Eguchi, Minoru, Inada, Tomoki, Fukuda, Tsuguo (1987) Effects of crucible material on undoped LEC GaAs crystals. Journal of Crystal Growth, 84 (2). 237-240 doi:10.1016/0022-0248(87)90136-9
Motakef, Shahryar (1989) Thermoelastic analysis of GaAs in LEC growth configuration. Journal of Crystal Growth, 96 (1). 201-216 doi:10.1016/0022-0248(89)90288-1
Cazin-Bourguignon, Anne-Marie, Motakef, Shahryar (1989) Thermoelastic analysis of GaAs in LEC growth configuration. Journal of Crystal Growth, 96 (2). 390-404 doi:10.1016/0022-0248(89)90538-1
Miyazawa, Shintaro (1982) Striation etching of undoped, semi-insulating lec-grown GaAs. Journal of Crystal Growth, 57 (2). 459-461 doi:10.1016/0022-0248(82)90506-1
Otoki, Y., Sahara, M., Shibata, Misawo, Kuma, S., Kashiwa, M. (1995) Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal. Materials Science Forum, 196. 1431-1436 doi:10.4028/www.scientific.net/msf.196-201.1431
Ogawa, Tomoya (1989) A study on dislocation lines in an In-doped LEC GaAs crystal by IR light scattering and transmission microscopy. Journal of Crystal Growth, 96 (4). 777-784 doi:10.1016/0022-0248(89)90636-2
 
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