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Hirabayashi, Yasuo, Karasawa, Shiro, Kobayashi, Ken (1993) Epitaxial growth of cubic SiC by hot filament CVD. Journal of Crystal Growth, 128 (1). 369-374 doi:10.1016/0022-0248(93)90350-6

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of cubic SiC by hot filament CVD
JournalJournal of Crystal Growth
AuthorsHirabayashi, YasuoAuthor
Karasawa, ShiroAuthor
Kobayashi, KenAuthor
Year1993 (March)Volume128
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(93)90350-6Search in ResearchGate
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Mindat Ref. ID2811684Long-form Identifiermindat:1:5:2811684:0
GUID0
Full ReferenceHirabayashi, Yasuo, Karasawa, Shiro, Kobayashi, Ken (1993) Epitaxial growth of cubic SiC by hot filament CVD. Journal of Crystal Growth, 128 (1). 369-374 doi:10.1016/0022-0248(93)90350-6
Plain TextHirabayashi, Yasuo, Karasawa, Shiro, Kobayashi, Ken (1993) Epitaxial growth of cubic SiC by hot filament CVD. Journal of Crystal Growth, 128 (1). 369-374 doi:10.1016/0022-0248(93)90350-6
In(1993, March) Journal of Crystal Growth Vol. 128 (1) Elsevier BV

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Hirabayashi, Yasuo, Kobayashi, Ken, Karasawa, Shiro (1990) Low temperature epitaxial growth of 3C-SiC on (111) silicon substrates. Journal of Crystal Growth, 99 (1). 284-286 doi:10.1016/0022-0248(90)90528-s
Karasawa, Shiro, Mitsuhashi, Masahiko, Ohya, Seishiro, Kobayashi, Ken, Watanabe, Takeshi, Hirai, Kiyohito, Horiguchi, Kenichi, Togashi, Fumitaka (1993) Crystal growth of epitaxial CVD diamond using 13C isotope and characterization of dislocations by Raman spectroscopy. Journal of Crystal Growth, 128 (1). 403-407 doi:10.1016/0022-0248(93)90356-2
Togashi, Fumitaka, Kobayashi, Ken, Mitsuhashi, Masahiko, Karasawa, Shiro, Ohya, Seishiro, Watanabe, Takeshi (1993) Synthesis and morphology of CVD diamond on Ta and TaC film. Journal of Crystal Growth, 128 (1). 418-424 doi:10.1016/0022-0248(93)90359-5
Wei, J., Tzeng, Y. (1993) Growth of diamond by sequential deposition and etching process using hot filament CVD. Journal of Crystal Growth, 128 (1). 413-417 doi:10.1016/0022-0248(93)90358-4
Kobayashi, Ken, Kumagai, Masao, Karasawa, Shiro, Watanabe, Takeshi, Togashi, Fumitaka (1993) Effect of ion implantation and surface structure of silicon on diamond film nucleation. Journal of Crystal Growth, 128 (1). 408-412 doi:10.1016/0022-0248(93)90357-3
Aketagawa, Ken-ichi, Tatsumi, Toru, Sakai, Junro (1993) The influence of Cl2 on Si1 - xGex selective epitaxial growth and B-doping properties by UHV-CVD. Journal of Crystal Growth, 127 (1). 484-488 doi:10.1016/0022-0248(93)90666-k
Kaneko, Tsutomu (1993) Growth kinetics of vapor-grown SiC. Journal of Crystal Growth, 128 (1). 354-357 doi:10.1016/0022-0248(93)90347-y
Dmitriev, Vladimir, Cherenkov, Arthur (1993) Growth of SiC and SiC-AlN solid solution by container-free liquid phase epitaxy. Journal of Crystal Growth, 128 (1). 343-348 doi:10.1016/0022-0248(93)90345-w
Kobayashi, Ken, Karasawa, Shiro, Watanabe, Takeshi, Togashi, Fumitaka (1990) Growth of diamond thin films on silicon and TEM observation of the interface. Journal of Crystal Growth, 99 (1). 1211-1214 doi:10.1016/s0022-0248(08)80110-8
(1993) Editorial Board. Journal of Crystal Growth, 128 (1). doi:10.1016/0022-0248(93)90285-5
(1993) Editor's preface. Journal of Crystal Growth, 128 (1). doi:10.1016/0022-0248(93)90287-7
 
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