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Kuech, T.F., Perkins, N.R. (1996) Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters. Journal of Crystal Growth, 166 (1). 558-565 doi:10.1016/0022-0248(95)00891-8

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Reference TypeJournal (article/letter/editorial)
TitleMetalorganic vapor phase epitaxy of II–VI materials for visible light emitters
JournalJournal of Crystal Growth
AuthorsKuech, T.F.Author
Perkins, N.R.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(95)00891-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829094Long-form Identifiermindat:1:5:2829094:8
GUID0
Full ReferenceKuech, T.F., Perkins, N.R. (1996) Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters. Journal of Crystal Growth, 166 (1). 558-565 doi:10.1016/0022-0248(95)00891-8
Plain TextKuech, T.F., Perkins, N.R. (1996) Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters. Journal of Crystal Growth, 166 (1). 558-565 doi:10.1016/0022-0248(95)00891-8
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

See Also

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Kuech, T.F., Redwing, J.M. (1994) Carbon doping in metalorganic vapor phase epitaxy. Journal of Crystal Growth, 145 (1). 382-389 doi:10.1016/0022-0248(94)91080-4
Ishibashi, A. (1996) II–VI blue-green light emitters. Journal of Crystal Growth, 159 (1). 555-565 doi:10.1016/0022-0248(95)00586-2
Huang, J.W., Kuech, T.F. (1994) Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation. Journal of Crystal Growth, 145 (1). 462-467 doi:10.1016/0022-0248(94)91092-8
Kuech, T.F., Nayak, S., Huang, J.-W., Li, J. (1996) Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs. Journal of Crystal Growth, 163 (1). 171-179 doi:10.1016/0022-0248(95)01056-4
Kuech, T.F., Tischler, M.A., Potemski, R., Cardone, F., Scilla, G. (1989) Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 98 (1). 174-187 doi:10.1016/0022-0248(89)90197-8
Safvi, S.A., Perkins, N.R., Horton, M.N., Matyi, R., Kuech, T.F. (1997) Effect of reactor geometry and growth parameters on the uniformity and material properties of grown by hydride vapor-phase epitaxy. Journal of Crystal Growth, 182 (3). 233-240 doi:10.1016/s0022-0248(97)00375-8
Sun, Jingxi, Zhang, Ling, Kuech, T.F (1998) In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy. Journal of Crystal Growth, 195 (1). 711-717 doi:10.1016/s0022-0248(98)00599-5
Tischler, M.A., Potemski, R.M., Kuech, T.F., Cardone, F., Goorsky, M.S., Scilla, G. (1991) Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 107 (1). 268-273 doi:10.1016/0022-0248(91)90469-l
Redwing, J.M., Simka, H., Jensen, K.F., Kuech, T.F. (1994) Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine. Journal of Crystal Growth, 145 (1). 397-402 doi:10.1016/0022-0248(94)91082-0
Kuech, Thomas F. (1991) The use of chloride based precursors in metalorganic vapor phase epitaxy. Journal of Crystal Growth, 115 (1). 52-60 doi:10.1016/0022-0248(91)90711-d
Heuken, Michael (1995) Metalorganic vapor phase epitaxy of wide-gap II–VI semiconductors for optoelectronic applications: current status and future trends. Journal of Crystal Growth, 146 (1). 570-579 doi:10.1016/0022-0248(94)00516-8
 
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