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Abrosimov, N.V., Rossolenko, S.N., Alex, V., Gerhardt, A., Schröder, W. (1996) Single crystal growth of Si1 − xGex by the Czochralski technique. Journal of Crystal Growth, 166 (1). 657-662 doi:10.1016/0022-0248(96)00036-x

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Reference TypeJournal (article/letter/editorial)
TitleSingle crystal growth of Si1 − xGex by the Czochralski technique
JournalJournal of Crystal Growth
AuthorsAbrosimov, N.V.Author
Rossolenko, S.N.Author
Alex, V.Author
Gerhardt, A.Author
Schröder, W.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00036-xSearch in ResearchGate
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Mindat Ref. ID2829137Long-form Identifiermindat:1:5:2829137:2
GUID0
Full ReferenceAbrosimov, N.V., Rossolenko, S.N., Alex, V., Gerhardt, A., Schröder, W. (1996) Single crystal growth of Si1 − xGex by the Czochralski technique. Journal of Crystal Growth, 166 (1). 657-662 doi:10.1016/0022-0248(96)00036-x
Plain TextAbrosimov, N.V., Rossolenko, S.N., Alex, V., Gerhardt, A., Schröder, W. (1996) Single crystal growth of Si1 − xGex by the Czochralski technique. Journal of Crystal Growth, 166 (1). 657-662 doi:10.1016/0022-0248(96)00036-x
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Abrosimov, N.V., Rossolenko, S.N., Thieme, W., Gerhardt, A., Schröder, W. (1997) Czochralski growth of Si- and Ge-rich SiGe single crystals. Journal of Crystal Growth, 174 (1). 182-186 doi:10.1016/s0022-0248(96)01102-5
Abrosimov, N.V., Lüdge, A., Riemann, H., Schröder, W. (2002) Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals. Journal of Crystal Growth, 237. 356-360 doi:10.1016/s0022-0248(01)01940-6
Bi, Y.J., Abell, J.S., Fort, D. (1996) Crystal growth of iron-based compounds by the cold-crucible Czochralski technique. Journal of Crystal Growth, 166 (1). 298-302 doi:10.1016/0022-0248(96)00045-0
Abrosimov, Nikolay V., Kurlov, Vladimir N., Schewski, Robert, Winkler, Jan (2020) Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900097
Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H. (2004) Simulation of heat transfer and melt flow in Czochralski growth of Si1−xGex crystals. Journal of Crystal Growth, 266 (1). 74-80 doi:10.1016/j.jcrysgro.2004.02.032
Rossolenko, S.N., Pet'kov, I.S., Kurlov, V.N., Red'kin, B.S. (1992) Servo-controlled crystal growth by the Czochralski method estimating the state vector of the controlled object. Journal of Crystal Growth, 116 (1). 185-190 doi:10.1016/0022-0248(92)90128-6
Wollweber, J., Schulz, D., Schröder, W. (1996) Extremely reduced dislocation density in SixGe1 − x single crystals grown by the float zone technique. Journal of Crystal Growth, 158 (1). 166-168 doi:10.1016/0022-0248(95)00460-2
Uda, Satoshi, Kon, Junichi, Shimamura, Kiyoshi, Fukuda, Tsuguo (1996) Analysis of Ge distribution in Si1 − xGex single crystal fibers by the micro-pulling down method. Journal of Crystal Growth, 167 (1). 64-73 doi:10.1016/0022-0248(96)00237-0
Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H. (2006) Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1−xGex crystals. Journal of Crystal Growth, 287 (2). 281-286 doi:10.1016/j.jcrysgro.2005.11.034
Van den Bogaert, N., Dupret, F. (1996) Simulation of back-melting in Czochralski growth. Journal of Crystal Growth, 166 (1). 446-451 doi:10.1016/0022-0248(96)00135-2
Wollweber, J., Schulz, D., Schröder, W. (1996) SixGe1 − x single crystals grown by the RF-heated float zone technique. Journal of Crystal Growth, 163 (3). 243-248 doi:10.1016/0022-0248(95)00968-x
 
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