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Cheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W. (1996) Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates. Journal of Crystal Growth, 166 (1). 597-600 doi:10.1016/0022-0248(96)00057-7

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Reference TypeJournal (article/letter/editorial)
TitleOptical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates
JournalJournal of Crystal Growth
AuthorsCheng, T.S.Author
Hooper, S.E.Author
Jenkins, L.C.Author
Foxon, C.T.Author
Lacklison, D.E.Author
Dewsnip, J.D.Author
Orton, J.W.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00057-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829240Long-form Identifiermindat:1:5:2829240:5
GUID0
Full ReferenceCheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W. (1996) Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates. Journal of Crystal Growth, 166 (1). 597-600 doi:10.1016/0022-0248(96)00057-7
Plain TextCheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W. (1996) Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates. Journal of Crystal Growth, 166 (1). 597-600 doi:10.1016/0022-0248(96)00057-7
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Hooper, S.E., Foxon, C.T., Cheng, T.S., Jenkins, L.C., Lacklison, D.E., Orton, J.W., Bestwick, T., Kean, A., Dawson, M., Duggan, G. (1995) Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source. Journal of Crystal Growth, 155 (3). 157-163 doi:10.1016/0022-0248(95)00216-2
Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L. (1995) Auger investigation of group III nitride films grown by molecular beam epitaxy. Journal of Crystal Growth, 146 (1). 340-343 doi:10.1016/0022-0248(94)00521-4
Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V. (1995) The growth and properties of group III nitrides. Journal of Crystal Growth, 150. 892-896 doi:10.1016/0022-0248(95)80068-n
Cheng, T.S., Foxon, C.T., Jenkins, L.C., Hooper, S.E., Orton, J.W., Novikov, S.V., Popova, T.B., Tret'yakov, V.V. (1996) Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy. Journal of Crystal Growth, 158 (4). 399-402 doi:10.1016/0022-0248(95)00551-x
Orton, J.W., Foxon, C.T., Cheng, T.S., Hooper, S.E., Novikov, S.V., Ber, B.Ya., Kudriavtsev, Yu.A. (1999) Incorporation of Mg in GaN grown by molecular beam epitaxy. Journal of Crystal Growth, 197 (1). 7-11 doi:10.1016/s0022-0248(98)00919-1
Foxon, C.T., Cheng, T.S., Jeffs, N.J., Dewsnip, J., Flannery, L., Orton, J.W., Harrison, I., Novikov, S.V., Ber, B.Ya., Kudriavtsev, Yu.A. (1998) Studies of p-GaN grown by MBE on GaAs(111)B. Journal of Crystal Growth, 189. 516-518 doi:10.1016/s0022-0248(98)00342-x
Cheng, T.S., Foxon, C.T., Jeffs, N.J., Dewsnip, D.J., Flannery, L.B., Orton, J.W., Harrison, I., Novikov, S.V., Ber, B.Ya., Kudriavtsev, Yu.A. (1998) Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. Materials Science Forum, 264. 1217-1220 doi:10.4028/www.scientific.net/msf.264-268.1217
Cheng, T.S., Dawson, P., Lacklison, D.E., Foxon, C.T., Orton, J.W., Hughes, O.H., Henini, M. (1993) Substrate temperature dependence of the minority carrier lifetime in (AlGa)As/GaAs MQWs grown with As2 and As4. Journal of Crystal Growth, 127 (1). 841-844 doi:10.1016/0022-0248(93)90744-h
Lacklison, D. E., Orton, J. W., Harrison, I., Cheng, T. S., Jenkins, L. C., Foxon, C. T., Hooper, S. E. (1995) Band gap of GaN films grown by molecularā€beam epitaxy on GaAs and GaP substrates. Journal of Applied Physics, 78 (3). 1838-1842 doi:10.1063/1.360217
Davydov, V.Yu, Goncharuk, I.N, Smirnov, A.N, Zolotareva, R.V, Subashiev, A.V, Cheng, T.S, Foxon, C.T (1998) Raman characterization of cubic GaN epitaxial layers grown on (001)GaAs and GaP substrates. Journal of Crystal Growth, 189. 430-434 doi:10.1016/s0022-0248(98)00317-0
Foxon, C.T., Cheng, T.S., Novikov, S.V., Korakakis, D., Jeffs, N.J., Grzegory, I., Porowski, S. (1999) Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals. Journal of Crystal Growth, 207 (1). 1-7 doi:10.1016/s0022-0248(99)00354-1
 
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