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Kurasawa, Masaki, Kobayashi, Satoshi, Kaneko, Futao, Oishi, Koichiro, Ohta, Shin-ichi (1996) Preparation and characterization of AgGaS2 thin films by vacuum evaporation. Journal of Crystal Growth, 167 (1). 151-156 doi:10.1016/0022-0248(96)00147-9

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Reference TypeJournal (article/letter/editorial)
TitlePreparation and characterization of AgGaS2 thin films by vacuum evaporation
JournalJournal of Crystal Growth
AuthorsKurasawa, MasakiAuthor
Kobayashi, SatoshiAuthor
Kaneko, FutaoAuthor
Oishi, KoichiroAuthor
Ohta, Shin-ichiAuthor
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00147-9Search in ResearchGate
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Mindat Ref. ID2829708Long-form Identifiermindat:1:5:2829708:4
GUID0
Full ReferenceKurasawa, Masaki, Kobayashi, Satoshi, Kaneko, Futao, Oishi, Koichiro, Ohta, Shin-ichi (1996) Preparation and characterization of AgGaS2 thin films by vacuum evaporation. Journal of Crystal Growth, 167 (1). 151-156 doi:10.1016/0022-0248(96)00147-9
Plain TextKurasawa, Masaki, Kobayashi, Satoshi, Kaneko, Futao, Oishi, Koichiro, Ohta, Shin-ichi (1996) Preparation and characterization of AgGaS2 thin films by vacuum evaporation. Journal of Crystal Growth, 167 (1). 151-156 doi:10.1016/0022-0248(96)00147-9
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

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Oishi, Koichiro, Kobayashi, Satoshi, Kaneko, Futao (1995) Growth and characterization of CuGaS2 thin films on (100) Si by vacuum deposition with three sources. Journal of Crystal Growth, 153 (3). 158-163 doi:10.1016/0022-0248(95)00154-9
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Tsuboi, Nozomu, Kurasawa, Masaki, Kobayashi, Satoshi, Oishi, Koichiro, Kaneko, Futao (1998) Lattice Strain in AgGaS2Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation. Japanese Journal of Applied Physics, 37. 4527-4532 doi:10.1143/jjap.37.4527
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