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Brandon, S., Gazit, D., Horowitz, A. (1996) Interface shapes and thermal fields during the gradient solidification method growth of sapphire single crystals. Journal of Crystal Growth, 167 (1). 190-207 doi:10.1016/0022-0248(96)00207-2

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Reference TypeJournal (article/letter/editorial)
TitleInterface shapes and thermal fields during the gradient solidification method growth of sapphire single crystals
JournalJournal of Crystal Growth
AuthorsBrandon, S.Author
Gazit, D.Author
Horowitz, A.Author
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00207-2Search in ResearchGate
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Mindat Ref. ID2829757Long-form Identifiermindat:1:5:2829757:0
GUID0
Full ReferenceBrandon, S., Gazit, D., Horowitz, A. (1996) Interface shapes and thermal fields during the gradient solidification method growth of sapphire single crystals. Journal of Crystal Growth, 167 (1). 190-207 doi:10.1016/0022-0248(96)00207-2
Plain TextBrandon, S., Gazit, D., Horowitz, A. (1996) Interface shapes and thermal fields during the gradient solidification method growth of sapphire single crystals. Journal of Crystal Growth, 167 (1). 190-207 doi:10.1016/0022-0248(96)00207-2
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

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Horowitz, A., Biderman, S., Einav, Y., Amar, G.Ben, Gazit, D. (1996) Improved control of sapphire crystal growth. Journal of Crystal Growth, 167 (1). 183-189 doi:10.1016/0022-0248(96)00149-2
Horowitz, A., Biderman, S., Gazit, D., Einav, Y., Ben-Amar, G., Weiss, M. (1993) The growth of dome-shaped sapphire crystals by the gradient solidification method (GSM). Journal of Crystal Growth, 128 (1). 824-828 doi:10.1016/s0022-0248(07)80052-2
Horowitz, A., Biderman, S., Amar, G.Ben, Laor, U., Weiss, M., Stern, A. (1987) The growth of single crystals of optical materials via the gradient solidification method. Journal of Crystal Growth, 85 (1). 215-222 doi:10.1016/0022-0248(87)90225-9
Dost, S., Su, J. (1996) A morphological stability analysis of the growth interface during liquid phase electroepitaxy. Journal of Crystal Growth, 167 (1). 305-319 doi:10.1016/0022-0248(96)00238-2
Makovsky, J., Horowitz, A., Gazit, D. (1974) Single crystal growth of CsCoCl3, Cs2CoCl4, Cs3CoCl5, RbCoCl3, Rb2CoCl4 and Rb3CoCl5. Journal of Crystal Growth, 22 (3). 241-243 doi:10.1016/0022-0248(74)90102-x
Liu, Yongcai, Virozub, Alexander, Brandon, Simon (1999) Facetting during directional growth of oxides from the melt: coupling between thermal fields, kinetics and melt/crystal interface shapes. Journal of Crystal Growth, 205 (3). 333-353 doi:10.1016/s0022-0248(99)00253-5
O'Hara, S. (1968) Some interface growth features of Czochralski sapphire crystals. Journal of Crystal Growth, 2 (3). 145-148 doi:10.1016/0022-0248(68)90078-x
Li, Q., Thi, H.Nguyen, Billia, B. (1996) Quantitative analysis of the influence of Peltier interface demarcation on directional solidification. Journal of Crystal Growth, 167 (1). 277-284 doi:10.1016/0022-0248(96)00226-6
Mayer, K., Woermann, D. (1996) Influence of a polycrystalline precipitation zone on the growth of single crystals using a gel method: growth of single crystals of PbHPO4. Journal of Crystal Growth, 169 (2). 317-324 doi:10.1016/s0022-0248(96)00398-3
Miyazawa, Shintaro (1996) Top-seeded solution growth of Bi 12 TiO 20 single crystals doped with P. Journal of Crystal Growth, 167 (3). 638-643 doi:10.1016/0022-0248(96)00320-x
Terada, Yasuko, Shimamura, Kiyoshi, Kochurikhin, V.V., Barashov, L.V., Ivanov, M.A., Fukuda, Tsuguo (1996) Growth and optical properties of ErVO4 and LuVO4 single crystals. Journal of Crystal Growth, 167 (1). 369-372 doi:10.1016/0022-0248(96)00407-1
 
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