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Yoon, S.F, Zhang, P.H, Zheng, H.Q, Radhakrishnan, K (1999) Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio. Materials Chemistry and Physics, 59. 20-25 doi:10.1016/s0254-0584(99)00031-0

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio
JournalMaterials Chemistry and Physics
AuthorsYoon, S.FAuthor
Zhang, P.HAuthor
Zheng, H.QAuthor
Radhakrishnan, KAuthor
Year1999 (April)Volume59
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(99)00031-0Search in ResearchGate
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Mindat Ref. ID3051629Long-form Identifiermindat:1:5:3051629:2
GUID0
Full ReferenceYoon, S.F, Zhang, P.H, Zheng, H.Q, Radhakrishnan, K (1999) Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio. Materials Chemistry and Physics, 59. 20-25 doi:10.1016/s0254-0584(99)00031-0
Plain TextYoon, S.F, Zhang, P.H, Zheng, H.Q, Radhakrishnan, K (1999) Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio. Materials Chemistry and Physics, 59. 20-25 doi:10.1016/s0254-0584(99)00031-0
In(1999, April) Materials Chemistry and Physics Vol. 59 (1) Elsevier BV

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Yoon, S.F., Zhang, P.H., Zheng, H.Q., Radhakrishnan, K., Swaminathan, S. (1998) Substrate temperature effects on the growth of In1−x−yGaxAlyAs on InP substrates by molecular beam epitaxy. Journal of Crystal Growth, 186 (3). 315-321 doi:10.1016/s0022-0248(97)00490-9
Yoon, S.F, Zhang, P.H, Zheng, H.Q, Radhakrishnan, K (1998) The effects of arsenic pressure on the properties of In1−x−yGaxAlyAs layers grown by molecular beam epitaxy. Journal of Crystal Growth, 191 (1). 24-30 doi:10.1016/s0022-0248(98)00007-4
Yoon, S.F., Zheng, H.Q. (1998) Molecular beam epitaxial growth of high-quality InP layers from solid phosphorus using a valved phosphorus cracker cell. Materials Chemistry and Physics, 56. 249-255 doi:10.1016/s0254-0584(98)00188-6
Radhakrishnan, K, Patrick, T.H.K, Zheng, H.Q, Zhang, P.H, Yoon, S.F (1999) InP/InxGa1−xAs (0.53⩽x⩽0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy. Journal of Crystal Growth, 207 (1). 8-14 doi:10.1016/s0022-0248(99)00353-x
Radhakrishnan, K, Zheng, H.Q, Zhang, P.H, Yoon, S.F, Ng, G.I (1999) Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell. Journal of Crystal Growth, 204 (3). 275-281 doi:10.1016/s0022-0248(99)00214-6
Zheng, H.Q., Radhakrishnan, K., Wang, H., Zhang, P.H., Yoon, S.F., Ng, G.I. (1999) Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy. Journal of Crystal Growth, 197 (4). 762-768 doi:10.1016/s0022-0248(98)01068-9
Yoon, S.F., Zhang, P.H., Zheng, H.Q., Radhakrishnan, K., Ng, G.I. (1998) The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy. Journal of Crystal Growth, 193 (3). 285-292 doi:10.1016/s0022-0248(98)00457-6
Yoon, S.F., Miao, Y.B., Radhakrishnan, K., Swaminathan, S. (1994) Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxy. Journal of Crystal Growth, 144 (3). 121-125 doi:10.1016/0022-0248(94)90446-4
Yoon, S.F, Mah, K.W, Zheng, H.Q, Zhang, P.H (2000) Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates. Journal of Crystal Growth, 208 (1). 197-204 doi:10.1016/s0022-0248(99)00389-9
Yoon, S.F, Mah, K.W, Zheng, H.Q, Zhang, P.H (1998) Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell. Journal of Crystal Growth, 191 (4). 613-620 doi:10.1016/s0022-0248(98)00386-8
Yoon, S.F, Zheng, H.Q, Zhang, P.H, Mah, K.W (1998) Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell. Journal of Crystal Growth, 186 (4). 475-479 doi:10.1016/s0022-0248(97)00829-4
 
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