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Chang, S.J., Juang, Y.Z., Nayak, D.K., Shiraki, Y. (1999) Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges. Materials Chemistry and Physics, 60. 22-27 doi:10.1016/s0254-0584(99)00034-6

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Reference TypeJournal (article/letter/editorial)
TitleReactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges
JournalMaterials Chemistry and Physics
AuthorsChang, S.J.Author
Juang, Y.Z.Author
Nayak, D.K.Author
Shiraki, Y.Author
Year1999 (July)Volume60
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(99)00034-6Search in ResearchGate
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Mindat Ref. ID3051667Long-form Identifiermindat:1:5:3051667:2
GUID0
Full ReferenceChang, S.J., Juang, Y.Z., Nayak, D.K., Shiraki, Y. (1999) Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges. Materials Chemistry and Physics, 60. 22-27 doi:10.1016/s0254-0584(99)00034-6
Plain TextChang, S.J., Juang, Y.Z., Nayak, D.K., Shiraki, Y. (1999) Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges. Materials Chemistry and Physics, 60. 22-27 doi:10.1016/s0254-0584(99)00034-6
In(1999, July) Materials Chemistry and Physics Vol. 60 (1) Elsevier BV

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Hong, H.F, Chao, C.K, Chyi, J.I, Tzeng, Y.C (2003) Reactive ion etching of GaN/InGaN using BCl3 plasma. Materials Chemistry and Physics, 77. 411-415 doi:10.1016/s0254-0584(02)00014-7
Feng, M.S., Guo, J.D., Lu, Y.M., Chang, E.Y. (1996) Reactive ion etching of GaN with BCl3/SF6 plasmas. Materials Chemistry and Physics, 45. 80-83 doi:10.1016/0254-0584(96)80053-8
Lin, C.T., Chang, S.J., Nayak, D.K., Shiraki, Y. (1996) The properties of SiO2 films using direct photo-chemical vapor deposition on strained SiGe layers. Applied Surface Science, 92. 193-197 doi:10.1016/0169-4332(95)00228-6
(1999) Editorial. Materials Chemistry and Physics, 60. doi:10.1016/s0254-0584(99)00131-5
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Kim, Dong-Pyo, Kim, Chang-Il (2003) Dry Etching of YMnO3 Thin Films in Ar/Cl2 and CF4/Cl2 Plasmas. Journal of the Korean Physical Society, 43 (5). 738-742 doi:10.3938/jkps.43.738
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