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Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Pan, F.M, Chang, T.C (1999) Characterization of Si1−x−yGexCy films grown by C+ implantation and subsequent pulsed laser annealing. Materials Chemistry and Physics, 60. 58-62 doi:10.1016/s0254-0584(99)00073-5

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of Si1−x−yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
JournalMaterials Chemistry and Physics
AuthorsLuo, Jian-ShingAuthor
Lin, Wen-TaiAuthor
Chang, C.YAuthor
Shih, P.SAuthor
Pan, F.MAuthor
Chang, T.CAuthor
Year1999 (July)Volume60
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(99)00073-5Search in ResearchGate
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Mindat Ref. ID3051677Long-form Identifiermindat:1:5:3051677:9
GUID0
Full ReferenceLuo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Pan, F.M, Chang, T.C (1999) Characterization of Si1−x−yGexCy films grown by C+ implantation and subsequent pulsed laser annealing. Materials Chemistry and Physics, 60. 58-62 doi:10.1016/s0254-0584(99)00073-5
Plain TextLuo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Pan, F.M, Chang, T.C (1999) Characterization of Si1−x−yGexCy films grown by C+ implantation and subsequent pulsed laser annealing. Materials Chemistry and Physics, 60. 58-62 doi:10.1016/s0254-0584(99)00073-5
In(1999, July) Materials Chemistry and Physics Vol. 60 (1) Elsevier BV

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Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Shih, P.S. (2000) Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1−x−yGexCy by vacuum annealing and pulsed KrF laser annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 124-128 doi:10.1016/s0168-583x(00)00028-8
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C. (1998) Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing. Materials Chemistry and Physics, 54. 160-163 doi:10.1016/s0254-0584(98)00024-8
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Chang, T.C (2000) Pulsed KrF laser annealing of Mo/Si0.76Ge0.24. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 129-134 doi:10.1016/s0168-583x(00)00029-x
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C., Wang, S.J. (1997) Interfacial reactions of the Co/Si1−xGex system. Materials Chemistry and Physics, 48. 140-144 doi:10.1016/s0254-0584(97)80108-3
Chen, Da-Ren, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S. (1998) Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing. Applied Physics Letters, 73 (10). 1355-1357 doi:10.1063/1.122161
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Tsai, W. C. (1997) Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films. Journal of Applied Physics, 82 (7). 3621-3623 doi:10.1063/1.365683
Luo, Jian-Shing, Lin, Wen-Tai, Wu, Long (1995) Epitaxial growth of Pb(Zr,Ti)O3 films on Nd1.85Ce0.15CuO4−x films by pulsed laser ablation. Materials Chemistry and Physics, 40. 202-206 doi:10.1016/0254-0584(95)01476-4
Luo, Jian-Shing, Huang, Jun-Chieh, Lin, Wen-Tai, Chang, C. Y., Shih, P. S. (1999) Effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer on the enhanced formation of C54 Ti(Si1−xGex)2. Applied Physics Letters, 75 (22). 3482-3484 doi:10.1063/1.125362
Fogarassy, Eric, Grob, Adriana, Grob, Jean-Jacques, Muller, Dominique, Prévot, Bernard, de Unamuno, Salomé, Boher, Pierre, Stehle, Marc (1998) Growth of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on < 100 > Si by ion implantation and pulsed excimer laser induced epitaxy. Materials Chemistry and Physics, 54. 153-159 doi:10.1016/s0254-0584(98)00023-6
Chang, J.F, Young, T.F, Yang, Y.L, Ueng, H.Y, Chang, T.C (2004) Silicide formation of Au thin films on (100) Si during annealing. Materials Chemistry and Physics, 83. 199-203 doi:10.1016/s0254-0584(03)00240-2
(1999) Editorial. Materials Chemistry and Physics, 60. doi:10.1016/s0254-0584(99)00131-5
 
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