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Kaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsKaneko, M.Author
Hashizume, T.Author
Odnoblyudov, V. A.Author
Tu, C. W.Author
Year2007 (May 15)Volume101
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2732451Search in ResearchGate
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Mindat Ref. ID5145331Long-form Identifiermindat:1:5:5145331:4
GUID0
Full ReferenceKaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451
Plain TextKaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451
In(2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing

See Also

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Odnoblyudov, V. A., Tu, C. W. (2006) Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy. Applied Physics Letters, 89 (11). 111922pp. doi:10.1063/1.2345025
Lew, A. Y., Yan, C. H., Tu, C. W., Yu, E. T. (1995) Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 67 (7). 932-934 doi:10.1063/1.114699
Bi, W. G., Tu, C. W. (1995) Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas‐source molecular beam epitaxy. Journal of Applied Physics, 78 (4). 2889-2891 doi:10.1063/1.360032
Yu, K. M., Kudrawiec, R., Luce, A. V., Ting, M., Walukiewicz, W., Tu, C. W. (2013) GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy. Applied Physics Letters, 102 (11). 112105pp. doi:10.1063/1.4795782
Liang, B. W., Lee, P. Z., Shih, D. W., Tu, C. W. (1992) Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature. Applied Physics Letters, 60 (17). 2104-2106 doi:10.1063/1.107103
Xin, H. P., Tu, C. W., Geva, M. (1999) Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy. Applied Physics Letters, 75 (10). 1416-1418 doi:10.1063/1.124711
Izadifard, M., Mtchedlidze, T., Vorona, I., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2005) Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. Applied Physics Letters, 86 (26). 261904pp. doi:10.1063/1.1952586
Liang, B. W., Tu, C. W. (1993) A kinetic model for As and P incorporation behaviors in GaAsP grown by gas‐source molecular beam epitaxy. Journal of Applied Physics, 74 (1). 255-259 doi:10.1063/1.354155
Xin, H. P., Tu, C. W. (1998) GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy. Applied Physics Letters, 72 (19). 2442-2444 doi:10.1063/1.121378
Hou, H. Q., Tu, C. W. (1992) Insitucontrol of As composition in InAsP and InGaAsP grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 60 (15). 1872-1874 doi:10.1063/1.107139
Izadifard, M., Bergman, J. P., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2006) Photoluminescence upconversion in GaInNP∕GaAs heterostructures grown by gas source molecular beam epitaxy. Journal of Applied Physics, 99 (7). 73515pp. doi:10.1063/1.2188087
 
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