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Zhu, Aaron, Shacham-Diamand, Yossi, Teo, Mark (2006) Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization. Journal of Solid State Chemistry, 179. 4056-4065 doi:10.1016/j.jssc.2006.09.002

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization
JournalJournal of Solid State Chemistry
AuthorsZhu, AaronAuthor
Shacham-Diamand, YossiAuthor
Teo, MarkAuthor
Year2006 (December)Volume179
PublisherElsevier BV
DOIdoi:10.1016/j.jssc.2006.09.002Search in ResearchGate
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Mindat Ref. ID587785Long-form Identifiermindat:1:5:587785:4
GUID0
Full ReferenceZhu, Aaron, Shacham-Diamand, Yossi, Teo, Mark (2006) Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization. Journal of Solid State Chemistry, 179. 4056-4065 doi:10.1016/j.jssc.2006.09.002
Plain TextZhu, Aaron, Shacham-Diamand, Yossi, Teo, Mark (2006) Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization. Journal of Solid State Chemistry, 179. 4056-4065 doi:10.1016/j.jssc.2006.09.002
In(2006, December) Journal of Solid State Chemistry Vol. 179 (12) Elsevier BV

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Kohn, A., Eizenberg, M., Shacham-Diamand, Y., Sverdlov, Y. (2001) Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization. Materials Science and Engineering: A, 302. 18-25 doi:10.1016/s0921-5093(00)01348-4
Kohn, A., Eizenberg, M., Shacham-Diamand, Y. (2003) Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization. Journal of Applied Physics, 94 (5). 3015-3024 doi:10.1063/1.1598635
Inberg, A., Zhu, L., Hirschberg, G., Gladkikh, A., Croitoru, N., Shacham-Diamand, Y., Gileadi, E. (2001) Characterization of the Initial Growth Stages of Electroless Ag(W) Films Deposited on Si(100). Journal of the Electrochemical Society, 148. doi:10.1149/1.1415549
Kohn, A., Eizenberg, M., Shacham-Diamand, Y. (2002) Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films. Journal of Applied Physics, 92 (9). 5508-5511 doi:10.1063/1.1512321
Kumar, Anuj, Kumar, Mukesh, Kumar, Dinesh (2012) Effect of composition on electroless deposited Ni–Co–P alloy thin films as a diffusion barrier for copper metallization. Applied Surface Science, 258. 7962-7967 doi:10.1016/j.apsusc.2012.04.145
Shacham-Diamand, Yosi, Lopatin, Sergey (1999) Integrated electroless metallization for ULSI. Electrochimica Acta, 44 (21). 3639-3649 doi:10.1016/s0013-4686(99)00067-5
Zhu, L., Susac, D., Lam, A., Teo, M., Wong, P.C., Bizzotto, D., Campbell, S.A., Parsons, R.R., Mitchell, K.A.R. (2006) Structure of sputtered Co–Se thin films prepared for an application in catalysis. Journal of Solid State Chemistry, 179. 3942-3948 doi:10.1016/j.jssc.2006.08.028
Petrov, N., Sverdlov, Y., Shacham-Diamand, Y. (2002) Electrochemical Study of the Electroless Deposition of Co(P) and Co(W, P) Alloys. Journal of the Electrochemical Society, 149. doi:10.1149/1.1452118
Duhin, A., Sverdlov, Y., Feldman, Y., Shacham-Diamand, Y. (2009) Electroless deposition of NiWB alloy on p-type Si(100) for NiSi contact metallization. Electrochimica Acta, 54 (25). 6036-6041 doi:10.1016/j.electacta.2009.01.062
Inberg, A., Bogush, V., Croitoru, N., Dubin, V., Shacham-Diamand, Y. (2003) Novel Highly Conductive Silver-Tungsten Thin Films Electroless Deposited from Benzoate Solution for Microelectronic Applications. Journal of the Electrochemical Society, 150. doi:10.1149/1.1562596
Kohn, A., Eizenberg, M., Shacham-Diamand, Y. (2003) Structure of electroless deposited Co0.9W0.02P0.08 thin films and their evolution with thermal annealing. Journal of Applied Physics, 94 (6). 3810-3822 doi:10.1063/1.1602572
 
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