Lim, Dong Chan, Dietsche, Rainer, Ganteför, Gerd, Kim, Young Dok (2009) Oxidation of deposited Aun (n=2–13) on SiO2/Si: Influence of the NaOH(aq) treatment. Chemical Physics, 359. 161-165 doi:10.1016/j.chemphys.2009.03.023
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Oxidation of deposited Aun (n=2–13) on SiO2/Si: Influence of the NaOH(aq) treatment | ||
| Journal | Chemical Physics | ||
| Authors | Lim, Dong Chan | Author | |
| Dietsche, Rainer | Author | ||
| Ganteför, Gerd | Author | ||
| Kim, Young Dok | Author | ||
| Year | 2009 (May) | Volume | 359 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.chemphys.2009.03.023Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5962007 | Long-form Identifier | mindat:1:5:5962007:3 |
| GUID | 0 | ||
| Full Reference | Lim, Dong Chan, Dietsche, Rainer, Ganteför, Gerd, Kim, Young Dok (2009) Oxidation of deposited Aun (n=2–13) on SiO2/Si: Influence of the NaOH(aq) treatment. Chemical Physics, 359. 161-165 doi:10.1016/j.chemphys.2009.03.023 | ||
| Plain Text | Lim, Dong Chan, Dietsche, Rainer, Ganteför, Gerd, Kim, Young Dok (2009) Oxidation of deposited Aun (n=2–13) on SiO2/Si: Influence of the NaOH(aq) treatment. Chemical Physics, 359. 161-165 doi:10.1016/j.chemphys.2009.03.023 | ||
| In | (n.d.) Chemical Physics Vol. 359. Elsevier BV | ||
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