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Azhdarov, G. Kh., Kyazimzade, R. Z. (2005) Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method. Crystallography Reports, 50. doi:10.1134/1.2133992

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method
JournalCrystallography Reports
AuthorsAzhdarov, G. Kh.Author
Kyazimzade, R. Z.Author
Year2005 (December)Volume50
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.2133992Search in ResearchGate
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Mindat Ref. ID613779Long-form Identifiermindat:1:5:613779:7
GUID0
Full ReferenceAzhdarov, G. Kh., Kyazimzade, R. Z. (2005) Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method. Crystallography Reports, 50. doi:10.1134/1.2133992
Plain TextAzhdarov, G. Kh., Kyazimzade, R. Z. (2005) Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method. Crystallography Reports, 50. doi:10.1134/1.2133992
In(2005) Crystallography Reports Vol. 50. Pleiades Publishing Ltd

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Azhdarov, G. Kh., Zeynalov, Z. M., Agamaliyev, Z. A., Kyazimova, A. I. (2010) Growth of single crystals of semiconductor solid solutions by double feeding of the melt method. Crystallography Reports, 55 (4) 716-719 doi:10.1134/s1063774510040309
Azhdarov, G. Kh., Agamaliev, Z. A., Islamzade, E. M. (2014) Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt. Crystallography Reports, 59 (3) 442-445 doi:10.1134/s1063774514020059
Azhdarov, G. Kh., Zeynalov, Z. M., Huseynli, L. A. (2009) The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod. Crystallography Reports, 54 (1) 152-156 doi:10.1134/s106377450901026x
Aghamaliyev, Z. A., Islamzade, E. M., Azhdarov, G. Kh. (2016) Modeling the distribution of Ga and Sb impurities in Ge‒Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals. Crystallography Reports, 61 (2) 327-330 doi:10.1134/s1063774516020024
Kyazimova, V. K., Alekperov, A. I., Zakhrabekova, Z. M., Azhdarov, G. Kh. (2014) Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod. Crystallography Reports, 59 (3) 415-417 doi:10.1134/s1063774514020114
Kyazimova, V. K., Zeynalov, Z. M., Zakhrabekova, Z. M., Azhdarov, G. Kh. (2006) Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt. Crystallography Reports, 51. doi:10.1134/s1063774506070273
Avetisov, I. Kh., Mel’kov, A. Yu., Zinov’ev, A. Yu., Zharikov, E. V. (2005) Growth of nonstoichiometric PbTe crystals by the vertical Bridgman method using the axial-vibration control technique. Crystallography Reports, 50. doi:10.1134/1.2133987
Aghamaliev, Z. A., Azhdarov, G. Kh. (2020) Donor Complexes Formed by Cu and Zn Multi-Acceptor Impurities in Ge Crystals. Crystallography Reports, 65 (6) 957-960 doi:10.1134/s1063774520060036
Azhdarov, G. Kh., Zeynalov, Z. M., Agamaliyev, Z. A., Mamedova, S. O. (2011) Growth dynamics of Ge1−x Si x single crystals obtained by directional constitutional supercooling of the melt. Crystallography Reports, 56 (3) 531-534 doi:10.1134/s1063774511030023
Azhdarov, G. Kh., Zeynalov, Z. M., Zakhrabekova, Z. M., Kyazimova, A. I. (2010) Electroactive complex in thermally treated Ge-Si 〈Cu, Al〉 crystals. Crystallography Reports, 55 (3) 462-465 doi:10.1134/s1063774510030168
Islamzade, E. M., Agamaliev, Z. A., Zakhrabekova, Z. M., Azhdarov, G. Kh. (2014) Deep acceptor complex in thermally processed Ge-Si〈Ga,Ni〉 crystals. Crystallography Reports, 59 (4) 563-566 doi:10.1134/s1063774514040063
 
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