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Crandall, Richard S. (1980) Electronic transport in bandgap states of hydrogeneted amorphous silicon. Journal of Non-Crystalline Solids, 35. 381-386 doi:10.1016/0022-3093(80)90624-9

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Reference TypeJournal (article/letter/editorial)
TitleElectronic transport in bandgap states of hydrogeneted amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsCrandall, Richard S.Author
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90624-9Search in ResearchGate
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Mindat Ref. ID613962Long-form Identifiermindat:1:5:613962:3
GUID0
Full ReferenceCrandall, Richard S. (1980) Electronic transport in bandgap states of hydrogeneted amorphous silicon. Journal of Non-Crystalline Solids, 35. 381-386 doi:10.1016/0022-3093(80)90624-9
Plain TextCrandall, Richard S. (1980) Electronic transport in bandgap states of hydrogeneted amorphous silicon. Journal of Non-Crystalline Solids, 35. 381-386 doi:10.1016/0022-3093(80)90624-9
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

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Ching, W.Y. (1980) Electronic states of florinated amorphous silicon. Journal of Non-Crystalline Solids, 35. 61-66 doi:10.1016/0022-3093(80)90572-4
Overhof, Harald, Beyer, Wolfhard (1980) Density of states in amorphous silicon determined from transport experiments. Journal of Non-Crystalline Solids, 35. 375-380 doi:10.1016/0022-3093(80)90623-7
Nagels, P., Colson, R., Van Gool, L. (1980) Electronic transport in amorphous CdAs2. Journal of Non-Crystalline Solids, 35. 427 doi:10.1016/0022-3093(80)90632-8
Crandall, Richard S (1989) Defect relaxation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 597-599 doi:10.1016/0022-3093(89)90661-3
Pfister, G., Taylor, P.C. (1980) Experimental investigation of defect states in amorphous chalcogenide glasses. Journal of Non-Crystalline Solids, 35. 793-805 doi:10.1016/0022-3093(80)90299-9
Viktorovitch, P., Jousse, D. (1980) Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements. Journal of Non-Crystalline Solids, 35. 569-574 doi:10.1016/0022-3093(80)90655-9
Hanak, J.J. (1980) Stacked solar cells of amorphous silicon. Journal of Non-Crystalline Solids, 35. 755-759 doi:10.1016/0022-3093(80)90294-x
Solomon, Ionel (1980) Spin physics of recombination centers in amorphous silicon. Journal of Non-Crystalline Solids, 35. 625-631 doi:10.1016/0022-3093(80)90274-4
Pankove, J.I, Pollak, Fred H, Schnabolk, C (1980) Optical absorption by GAP states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 35. 459-462 doi:10.1016/0022-3093(80)90637-7
Joannopoulos, J.D. (1980) Theoretical calculations of defect states in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 781-792 doi:10.1016/0022-3093(80)90298-7
Hauser, J.J., Hutton, R.S. (1980) Defect states and impurity states in amorphous As2Te3. Journal of Non-Crystalline Solids, 35. 889-894 doi:10.1016/0022-3093(80)90313-0
 
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