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Shengurov, V. G. (2005) Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates. Physics of the Solid State, 47. 89pp. doi:10.1134/1.1853452

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates
JournalPhysics of the Solid State
AuthorsShengurov, V. G.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853452Search in ResearchGate
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Mindat Ref. ID6152003Long-form Identifiermindat:1:5:6152003:1
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Full ReferenceShengurov, V. G. (2005) Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates. Physics of the Solid State, 47. 89pp. doi:10.1134/1.1853452
Plain TextShengurov, V. G. (2005) Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates. Physics of the Solid State, 47. 89pp. doi:10.1134/1.1853452
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

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Shengurov, V. G., Svetlov, S. P., Chalkov, V. Yu., Andreev, B. A., Krasil’nik, Z. F., Kryzhkov, D. I. (2004) Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy. Physics of the Solid State, 46. 101-103 doi:10.1134/1.1641932
Timoshenko, V. Yu. (2005) Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix Measured under Strong Optical Excitation. Physics of the Solid State, 47. 121pp. doi:10.1134/1.1853460
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Pukha, V. E. (2005) Dependence of the Condensation Coefficient of Bismuth on the Energy of Particles Deposited from an Ion Beam on Silicon Substrates. Physics of the Solid State, 47. 595pp. doi:10.1134/1.1884726
Orlov, L. K., Ivin, S. V., Shengurov, D. V., Shteĭnman, É. A. (1999) Photoluminescence properties of erbium-doped single-crystal and porous silicon films. Technical Physics Letters, 25. 393-394 doi:10.1134/1.1262493
Fedotov, S. D., Statsenko, V. N., Egorov, N. N., Golubkov, S. A. (2019) Effect of Solid-State Epitaxial Recrystallization on Defect Density in Ultrathin Silicon-on-Sapphire Layers. Physics of the Solid State, 61. 2353-2358 doi:10.1134/s1063783419120126
Shengurov, Sh. G., Shabanov, V. N., Shabanov, A. V. (1997) Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous lowenergy ion bombardment of the growth surface. Technical Physics Letters, 23. 281-283 doi:10.1134/1.1261843
Maslov, V. N., Nikolaev, V. I., Krymov, V. M., Bugrov, V. E., Romanov, A. E. (2015) Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations. Physics of the Solid State, 57. 1342-1346 doi:10.1134/s1063783415070215
Teterukov, S. A. (2005) Effect of Nonuniform Permittivity of a Solid-State Matrix on the Spectral Width of Erbium Ion Luminescence. Physics of the Solid State, 47. 106pp. doi:10.1134/1.1853456
Denisov, S. A., Chalkov, V. Yu., Shengurov, V. G., Svetlov, S. P., Pavlov, D. A., Pitirimova, E. A. (2010) Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy. Inorganic Materials, 46 (7) 693-702 doi:10.1134/s0020168510070010
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