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Krasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase
JournalPhysics of the Solid State
AuthorsKrasil’nikova, L. V.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853453Search in ResearchGate
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Mindat Ref. ID6152004Long-form Identifiermindat:1:5:6152004:0
GUID0
Full ReferenceKrasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453
Plain TextKrasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd


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