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Kočka, Jan, Vaněček, Milan, Stuchlík, Jiří, Kubelík, Igor, Šípek, Emil (1983) Initial stage of growth of the GD a-Si:H. Journal of Non-Crystalline Solids, 59. 763-766 doi:10.1016/0022-3093(83)90283-1

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Reference TypeJournal (article/letter/editorial)
TitleInitial stage of growth of the GD a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsKočka, JanAuthor
Vaněček, MilanAuthor
Stuchlík, JiříAuthor
Kubelík, IgorAuthor
Šípek, EmilAuthor
Year1983 (December)Volume59
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(83)90283-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID620478Long-form Identifiermindat:1:5:620478:9
GUID0
Full ReferenceKočka, Jan, Vaněček, Milan, Stuchlík, Jiří, Kubelík, Igor, Šípek, Emil (1983) Initial stage of growth of the GD a-Si:H. Journal of Non-Crystalline Solids, 59. 763-766 doi:10.1016/0022-3093(83)90283-1
Plain TextKočka, Jan, Vaněček, Milan, Stuchlík, Jiří, Kubelík, Igor, Šípek, Emil (1983) Initial stage of growth of the GD a-Si:H. Journal of Non-Crystalline Solids, 59. 763-766 doi:10.1016/0022-3093(83)90283-1
In(1983) Journal of Non-Crystalline Solids Vol. 59. Elsevier BV

See Also

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Kočka, Jan, Šípek, Emil, Štika, Oldřich, Curtins, Herman, Juška, Gytis (1989) A-Si:H drift mobility - study of isotropy. Journal of Non-Crystalline Solids, 114. 336-338 doi:10.1016/0022-3093(89)90155-5
Verveniotis, Elisseos, Šípek, Emil, Stuchlík, Jiří, Kočka, Jan, Rezek, Bohuslav (2012) Generating ordered Si nanocrystals via atomic force microscopy. Journal of Non-Crystalline Solids, 358 (17) 2118-2121 doi:10.1016/j.jnoncrysol.2011.12.018
Tříska, A., Shimizu, I., Kočka, J., Tichý, L., Vaněček, M. (1983) Photoelectrical and optical study of p-type a-Si:H used as a photoreceptor. Journal of Non-Crystalline Solids, 59. 493-496 doi:10.1016/0022-3093(83)90628-2
Kočka, J., Vaněček, M., Kožíšek, Z., Štika, O., Beichler, J. (1983) Comparison of the density of gap states in a-Si:H found by different methods. Journal of Non-Crystalline Solids, 59. 293-296 doi:10.1016/0022-3093(83)90579-3
Vaněček, M., Kočka, J., Demo, P., Šípek, E., Tříska, A. (1987) Steady-state transport under non-equilibrium conditions in undoped and phosphorus doped a-Si:H at very low temperature. Journal of Non-Crystalline Solids, 90 (1) 183-186 doi:10.1016/s0022-3093(87)80409-x
Vaněček, M., Stuchlík, J., Kočka, J., Tříska, A. (1985) Determination of the mobility gap in amorphous silicon from a low temperature photoconductivity measurement. Journal of Non-Crystalline Solids, 77. 299-302 doi:10.1016/0022-3093(85)90660-x
Kočka, J., Klíma, O., Šípek, E., Juška, G. (1992) Phototransport in a-Si:H at high electric fields. Journal of Non-Crystalline Solids, 141. 133-141 doi:10.1016/s0022-3093(05)80527-7
Fejfar, A., Poruba, A., Vaněček, M., Kočka, J. (1996) Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM. Journal of Non-Crystalline Solids, 198. 304-308 doi:10.1016/0022-3093(95)00692-3
Street, R.A., Zesch, J. (1983) Time-of-flight photoconductivity in a-Si:H. Journal of Non-Crystalline Solids, 59. 449-452 doi:10.1016/0022-3093(83)90617-8
Beyer, W., Overhof, H. (1983) High-temperature kink of the conductivity of doped a-Si:H films. Journal of Non-Crystalline Solids, 59. 301-304 doi:10.1016/0022-3093(83)90581-1
Hoheisel, M., Carius, R., Fuhs, W. (1983) Low temperature photoconductivity in a-Si:H films. Journal of Non-Crystalline Solids, 59. 457-460 doi:10.1016/0022-3093(83)90619-1
 
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