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Yao, Q.J., Li, D.J. (2005) Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer. Journal of Non-Crystalline Solids, 351 (40) 3191-3194 doi:10.1016/j.jnoncrysol.2005.08.014

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and property study of thin film transistor using rf sputtered ZnO as channel layer
JournalJournal of Non-Crystalline Solids
AuthorsYao, Q.J.Author
Li, D.J.Author
Year2005 (October)Volume351
Issue40
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.08.014Search in ResearchGate
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Mindat Ref. ID643273Long-form Identifiermindat:1:5:643273:1
GUID0
Full ReferenceYao, Q.J., Li, D.J. (2005) Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer. Journal of Non-Crystalline Solids, 351 (40) 3191-3194 doi:10.1016/j.jnoncrysol.2005.08.014
Plain TextYao, Q.J., Li, D.J. (2005) Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer. Journal of Non-Crystalline Solids, 351 (40) 3191-3194 doi:10.1016/j.jnoncrysol.2005.08.014
In(2005, October) Journal of Non-Crystalline Solids Vol. 351 (40) Elsevier BV

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