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Shastin, V. N., Zhukavin, R. Kh., Orlova, E. E., Pavlov, S. G., Rümmeli, M. H., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Riemann, H., Bradley, I. V., van der Meer, A. F. G. (2002) Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80 (19). 3512-3514 doi:10.1063/1.1476955

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Reference TypeJournal (article/letter/editorial)
TitleStimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation
JournalApplied Physics Letters
AuthorsShastin, V. N.Author
Zhukavin, R. Kh.Author
Orlova, E. E.Author
Pavlov, S. G.Author
Rümmeli, M. H.Author
Hübers, H.-W.Author
Hovenier, J. N.Author
Klaassen, T. O.Author
Riemann, H.Author
Bradley, I. V.Author
van der Meer, A. F. G.Author
Year2002 (May 13)Volume80
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.1476955Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8531908Long-form Identifiermindat:1:5:8531908:8
GUID0
Full ReferenceShastin, V. N., Zhukavin, R. Kh., Orlova, E. E., Pavlov, S. G., Rümmeli, M. H., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Riemann, H., Bradley, I. V., van der Meer, A. F. G. (2002) Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80 (19). 3512-3514 doi:10.1063/1.1476955
Plain TextShastin, V. N., Zhukavin, R. Kh., Orlova, E. E., Pavlov, S. G., Rümmeli, M. H., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Riemann, H., Bradley, I. V., van der Meer, A. F. G. (2002) Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80 (19). 3512-3514 doi:10.1063/1.1476955
In(2002, May) Applied Physics Letters Vol. 80 (19) AIP Publishing

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Pavlov, S. G., Hübers, H.-W., Rümmeli, M. H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Riemann, H. (2002) Far-infrared stimulated emission from optically excited bismuth donors in silicon. Applied Physics Letters, 80 (25). 4717-4719 doi:10.1063/1.1489080
Pavlov, S. G., Böttger, U., Hovenier, J. N., Abrosimov, N. V., Riemann, H., Zhukavin, R. Kh., Shastin, V. N., Redlich, B., van der Meer, A. F. G., Hübers, H.-W. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94 (17). 171112pp. doi:10.1063/1.3119662
Zhukavin, R. Kh., Shastin, V. N., Pavlov, S. G., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., van der Meer, A. F. G. (2007) Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics, 102 (9). 93104pp. doi:10.1063/1.2804756
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Pavlov, S. G., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Kirsanov, A. V., Hübers, H.-W., Auen, K., Riemann, H. (2000) Stimulated Emission from Donor Transitions in Silicon. Physical Review Letters, 84 (22). 5220-5223 doi:10.1103/physrevlett.84.5220
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Pavlov, S. G., Hübers, H.-W., Böttger, U., Zhukavin, R. Kh., Shastin, V. N., Hovenier, J. N., Redlich, B., Abrosimov, N. V., Riemann, H. (2008) Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92 (9). 91111pp. doi:10.1063/1.2890717
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