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Cho, Won-Ju, Ahn, Chang-Geun (2007) Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel. Applied Physics Letters, 90 (14). 143509pp. doi:10.1063/1.2719641

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Reference TypeJournal (article/letter/editorial)
TitleThermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel
JournalApplied Physics Letters
AuthorsCho, Won-JuAuthor
Ahn, Chang-GeunAuthor
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2719641Search in ResearchGate
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Mindat Ref. ID8553263Long-form Identifiermindat:1:5:8553263:4
GUID0
Full ReferenceCho, Won-Ju, Ahn, Chang-Geun (2007) Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel. Applied Physics Letters, 90 (14). 143509pp. doi:10.1063/1.2719641
Plain TextCho, Won-Ju, Ahn, Chang-Geun (2007) Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel. Applied Physics Letters, 90 (14). 143509pp. doi:10.1063/1.2719641
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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CHO, Won-Ju, AHN, Chang-Geun (2007) Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices. Journal of the Korean Physical Society, 51 (96). 313pp. doi:10.3938/jkps.51.313
Kim, Min-Soo, Cho, Won-Ju (2010) Effects of back interface trap states on the fully depleted strained-silicon-on-insulator capacitorless single transistor dynamic random access memory cells. Applied Physics Letters, 97 (15). 152105pp. doi:10.1063/1.3494262
Im, Kiju, Cho, Won-Ju, Ahn, Chang-Geun, Yang, Jong-Heon, Oh, Jihun, Lee, Seongjae, Hwang, Hyunsang (2004) Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing. Japanese Journal of Applied Physics, 43 (5) 2438-2441 doi:10.1143/jjap.43.2438
Kim, Sang-Kyun, Cho, Chang-Hee, Kim, Baek-Hyun, Park, Seong-Ju, Won Lee, Jae (2009) Electrical and optical characteristics of silicon nanocrystal solar cells. Applied Physics Letters, 95 (14). 143120pp. doi:10.1063/1.3242030
Baek, Sungkweon, Hwang, Hyunsang, Im, Kiju, Ahn, Chang-Geun, Yang, Jong-Heon, Baek, In-Bok, Lee, Seongjae, Cho, Won-ju (2005) Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping. Applied Physics Letters, 86 (19). 193503pp. doi:10.1063/1.1923758
Ho, Chia-Cheng, Chiou, Bi-Shiou, Chang, Li-Chun (2007) Thickness effects on the electrical characteristics of Ba0.7Sr0.3TiO3 capacitors with nano-Cr interlayer. Applied Physics Letters, 90 (13). 132906pp. doi:10.1063/1.2717553
LEE, Woo-Hyun, KOO, Hyun-Mo, CHO, Won-Ju, JUNG, Jongwan, OH, Soon-Young, AHN, Chang-Geun (2007) Electrical Characteristics of Excimer-Laser-Annealed Poly-Si Thin-Film Transistors. Journal of the Korean Physical Society, 51 (96). 241pp. doi:10.3938/jkps.51.241
Kim, Sang Soo, Cho, Won-Ju, Ahn, Chang-Geun, Im, Kiju, Yang, Jong-Heon, Baek, In-Bok, Lee, Seongjae, Lim, Koeng Su (2006) Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition. Applied Physics Letters, 88 (22). 223502pp. doi:10.1063/1.2208268
Im, Kiju, Ahn, Chang-Geun, Yang, Jong-Heon, Baek, In-Bok, Lee, Seongjae, Hwang, Hyunsang, Cho, Won-ju (2006) Formation of a self-aligned hard mask using hydrogen silsesquioxane. Applied Physics Letters, 88 (15). 153502pp. doi:10.1063/1.2195012
Lee, Dong Uk, Lee, Min Seung, Kim, Jae-Hoon, Kim, Eun Kyu, Koo, Hyun-Mo, Cho, Won-Ju, Kim, Won Mok (2007) Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method. Applied Physics Letters, 90 (9). 93514pp. doi:10.1063/1.2711772
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