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Gowda, Srivardhan, Mathur, Guru, Misra, Veena (2007) Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates. Applied Physics Letters, 90 (14). 142113pp. doi:10.1063/1.2720337

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Reference TypeJournal (article/letter/editorial)
TitleValence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates
JournalApplied Physics Letters
AuthorsGowda, SrivardhanAuthor
Mathur, GuruAuthor
Misra, VeenaAuthor
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2720337Search in ResearchGate
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Mindat Ref. ID8553293Long-form Identifiermindat:1:5:8553293:5
GUID0
Full ReferenceGowda, Srivardhan, Mathur, Guru, Misra, Veena (2007) Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates. Applied Physics Letters, 90 (14). 142113pp. doi:10.1063/1.2720337
Plain TextGowda, Srivardhan, Mathur, Guru, Misra, Veena (2007) Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates. Applied Physics Letters, 90 (14). 142113pp. doi:10.1063/1.2720337
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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