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Jo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Hong, Woong-Ki, Jo, Minseok, Hwang, Hyunsang, Lee, Takhee (2007) Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy. Applied Physics Letters, 90 (17). 173106pp. doi:10.1063/1.2728754

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Reference TypeJournal (article/letter/editorial)
TitleEffects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy
JournalApplied Physics Letters
AuthorsJo, GunhoAuthor
Maeng, JongsunAuthor
Kim, Tae-WookAuthor
Hong, Woong-KiAuthor
Jo, MinseokAuthor
Hwang, HyunsangAuthor
Lee, TakheeAuthor
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2728754Search in ResearchGate
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Mindat Ref. ID8553602Long-form Identifiermindat:1:5:8553602:9
GUID0
Full ReferenceJo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Hong, Woong-Ki, Jo, Minseok, Hwang, Hyunsang, Lee, Takhee (2007) Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy. Applied Physics Letters, 90 (17). 173106pp. doi:10.1063/1.2728754
Plain TextJo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Hong, Woong-Ki, Jo, Minseok, Hwang, Hyunsang, Lee, Takhee (2007) Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy. Applied Physics Letters, 90 (17). 173106pp. doi:10.1063/1.2728754
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Jo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Hong, Woong-Ki, Choi, Byung-Sang, Lee, Takhee (2007) Channel-length and gate-bias dependence of contact resistance and mobility for In2O3 nanowire field effect transistors. Journal of Applied Physics, 102 (8). 84508pp. doi:10.1063/1.2799960
Choe, Minhyeok, Jo, Gunho, Maeng, Jongsun, Hong, Woong-Ki, Jo, Minseok, Wang, Gunuk, Park, Woojin, Lee, Byoung Hun, Hwang, Hyunsang, Lee, Takhee (2010) Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness. Journal of Applied Physics, 107 (3). 34504pp. doi:10.1063/1.3298910
Kwon, Soon-Shin, Hong, Woong-Ki, Jo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Song, Sunghoon, Lee, Takhee (2008) Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates. Advanced Materials, 20. 4557-4562 doi:10.1002/adma.200800691
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